X-On Electronics has gained recognition as a prominent supplier of PSMN3R4-30BLE,118 MOSFET across the USA, India, Europe, Australia, and various other global locations. PSMN3R4-30BLE,118 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PSMN3R4-30BLE,118 Nexperia

PSMN3R4-30BLE,118 electronic component of Nexperia
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See Product Specifications
Part No.PSMN3R4-30BLE,118
Manufacturer: Nexperia
Category: MOSFET
Description: MOSFET N-channel 30 V 3.4 mo FET
Datasheet: PSMN3R4-30BLE,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.975 ea
Line Total: USD 1.98

Availability - 742
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3078
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 1.5626
10 : USD 1.4717
25 : USD 1.466
100 : USD 1.3533
250 : USD 1.3529
500 : USD 1.3169
1000 : USD 1.281
3000 : USD 1.2451

742
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 1.975
10 : USD 1.6923
30 : USD 1.5163
100 : USD 0.8509
500 : USD 0.7695
800 : USD 0.735

969
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 1.932
10 : USD 1.6675
100 : USD 1.426
250 : USD 1.4145
500 : USD 1.403
800 : USD 1.1166
2400 : USD 1.1063
4800 : USD 1.0764

3078
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 7
Multiples : 1
7 : USD 1.5626
10 : USD 1.4717
25 : USD 1.466
100 : USD 1.3533
250 : USD 1.3529
500 : USD 1.3169
1000 : USD 1.281
3000 : USD 1.2451

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PSMN3R4-30BLE,118 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN3R4-30BLE,118 and other electronic components in the MOSFET category and beyond.

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PSMN3R4-30BLE N-channel 30 V 3.4 m logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low Rdson for low conduction losses 1.3 Applications Electronic fuse Hot swap Load switch Soft start 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j I drain current T = 25 C V = 10 V Fig. 1 1 - - 120 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 178 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 2.95 3.4 m DSon GS D j resistance Fig. 12 V = 4.5 V I = 25 A T = 25 C - 4.25 5 m GS D j Fig. 12 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 25 A V = 15 V - 12.2 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge V = 10 V I = 25 A V = 15 V - 81 - nC G(tot) GS D DS Fig. 14 Fig. 15Nexperia PSMN3R4-30BLE N-channel 30 V 3.4 m logic level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 120 A - - 246 mJ DS(AL)S GS j(init) D source avalanche V 30 V unclamped R = 50 sup GS energy Fig. 3 1 Capped at 120A due to package 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R4-30BLE D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN3R4-30BLE PSMN3R4-30BLE 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V drain-gate voltage T 175 C T 25 C R = 20 k - 30 V DGR j j GS PSMN3R4-30BLE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 October 2012 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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