X-On Electronics has gained recognition as a prominent supplier of PSMN3R4-30BLE,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN3R4-30BLE,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN3R4-30BLE,118 Nexperia

PSMN3R4-30BLE,118 electronic component of Nexperia
PSMN3R4-30BLE,118 Nexperia
PSMN3R4-30BLE,118 MOSFETs
PSMN3R4-30BLE,118  Semiconductors

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See Product Specifications
Part No. PSMN3R4-30BLE,118
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-channel 30 V 3.4 mo FET
Datasheet: PSMN3R4-30BLE,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.775 ea
Line Total: USD 1.78 
Availability - 4242
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
847
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 38
Multiples : 1
38 : USD 1.7016
44 : USD 1.4882
44 : USD 1.4879
100 : USD 1.3039
250 : USD 1.2823
500 : USD 1.1972

534
Ship by Wed. 07 May to Mon. 12 May
MOQ : 1
Multiples : 1
1 : USD 3.2428
10 : USD 2.5617
30 : USD 2.1827
100 : USD 2.0581
500 : USD 2.0012
800 : USD 1.9756

4242
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ : 1
Multiples : 1
1 : USD 1.775
10 : USD 1.428
100 : USD 1.111
500 : USD 1.0472
800 : USD 1.0263

847
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 38
Multiples : 1
38 : USD 1.7016
44 : USD 1.4882
44 : USD 1.4879
100 : USD 1.3039
250 : USD 1.2823
500 : USD 1.1972

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PSMN3R4-30BLE,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN3R4-30BLE,118 and other electronic components in the MOSFETs category and beyond.

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PSMN3R4-30BLE N-channel 30 V 3.4 m logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low Rdson for low conduction losses 1.3 Applications Electronic fuse Hot swap Load switch Soft start 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j I drain current T = 25 C V = 10 V Fig. 1 1 - - 120 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 178 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 2.95 3.4 m DSon GS D j resistance Fig. 12 V = 4.5 V I = 25 A T = 25 C - 4.25 5 m GS D j Fig. 12 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 25 A V = 15 V - 12.2 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge V = 10 V I = 25 A V = 15 V - 81 - nC G(tot) GS D DS Fig. 14 Fig. 15Nexperia PSMN3R4-30BLE N-channel 30 V 3.4 m logic level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 120 A - - 246 mJ DS(AL)S GS j(init) D source avalanche V 30 V unclamped R = 50 sup GS energy Fig. 3 1 Capped at 120A due to package 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R4-30BLE D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN3R4-30BLE PSMN3R4-30BLE 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V drain-gate voltage T 175 C T 25 C R = 20 k - 30 V DGR j j GS PSMN3R4-30BLE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 October 2012 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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