PSMN1R5-25YL,115 Nexperia

PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Class-D amplifiers Motor control DC-to-DC converters Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C - - 25 V DS j j I drain current T =25C V =10V 1 - - 100 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 - - 109 W tot mb dissipation Dynamic characteristics Q gate-drain charge V = 4.5 V I =10A -9.2 -nC GD GS D V = 12 V see Figure 14 DS see Figure 15 Q total gate charge V = 4.5 V I =10A -36 -nC G(tot) GS D V = 12 V see Figure 14 DS see Figure 15 Static characteristics R drain-source V =10V I =15A - 1.13 1.5 m DSon GS D on-state resistance T =25C j 1 Continuous current is limited by package.Nexperia PSMN1R5-25YL N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R5-25YL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 25 V DS j j V drain-gate voltage T 25 C T 150 C R =20k -25 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 1 -100 A D GS mb V =10V T =25C see Figure 1 1 -100 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -815 A DM p mb P total power dissipation T =25C see Figure 2 -109 W tot mb T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =25C 1 -100 A S mb I peak source current t 10 s pulsed T =25C - 815 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =100 A V 25 V -290 mJ DS(AL)S GS j(init) D sup drain-source avalanche R =50 unclamped GS energy 1 Continuous current is limited by package. Nexperia B.V. 2017. All rights reserved PSMN1R5-25YL 1 Product data sheet Rev. 01 16 June 2009 2 of 13