PSMN1R5-40ES,127 Nexperia

PSMN1R5-40ES N-channel 40 V 1.6 m standard level MOSFET in I2PAK. Rev. 01 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC convertors Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --40 V DS j j 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 --338W P tot mb Static characteristics 2 drain-source on-state V =10V I =25A -1.3 1.6 m R DSon GS D resistance T = 25 C see Figure 13 j Dynamic characteristics Q gate-drain charge V =10V I =75A -32 -nC GD GS D V =20V see Figure 14 DS Q total gate charge - 136 - nC G(tot) see Figure 15 1 Continuous current is limited by package 2 Measured 3 mm from package.PSMN1R5-40ES Nexperia N-channel 40 V 1.6 m standard level MOSFET in I2PAK. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R5-40ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -40 V DGR j j GS V gate-source voltage -20 20 V GS 1 I drain current V =10V T =100 C - 120 A D GS mb 1 V =10V T = 25 C see Figure 1 - 120 A GS mb I peak drain current pulsed t 10 s T = 25 C see Figure 3 - 1301 A DM p mb P total power dissipation T = 25 C see Figure 2 - 338 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode 1 I source current T =25C - 120 A S mb I peak source current pulsed t 10 s T = 25 C - 1301 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25 C I = 120 A -1.4 J DS(AL)S GS j(init) D avalanche energy V 40 V unclamped R =50 sup GS t =0.1 ms p 1 Continuous current is limited by package. PSMN1R5-40ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 19 April 2011 2 of 14