PSMN038-100K,518 Nexperia

PSMN038-100K N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 25 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications Computer motherboards Switched-mode power supplies DC-to-DC convertors 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 150 C - - 100 V DS j j I drain current T =80C; --6.3 A D sp see Figure 1 and 3 P total power T =80C; --3.5 W tot sp dissipation see Figure 2 Dynamic characteristics Q gate-drain charge V =10V; I =6.3A; - 16 21.5 nC GD GS D V =50V; T =25C; DS j see Figure 11 Static characteristics R drain-source V =10V; I =5.2A; - 3338m DSon GS D on-state resistance T =25C; j see Figure 9 and 10Nexperia PSMN038-100K N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source 8 5 D 2S source 3S source G 4G gate mbb076 S 5D drain 1 4 6D drain SOT96-1 (SO8) 7D drain 8D drain 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN038-100K SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C; T 150 C - 100 V DS j j V gate-source voltage -20 20 V GS I drain current T =80 C; see Figure 1 and 3 -6.3 A D sp I peak drain current T =25 C; t 10 s; pulsed; see Figure 3 -50 A DM sp p P total power dissipation T =80 C; see Figure 2 -3.5 W tot sp T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =80C - 3.1 A S sp I peak source current T =25 C; t 10 s; pulsed - 50 A SM sp p Nexperia B.V. 2017. All rights reserved PSMN038-100K_2 Product data sheet Rev. 02 25 November 2009 2 of 12