X-On Electronics has gained recognition as a prominent supplier of PSMN069-100YS,115 MOSFET across the USA, India, Europe, Australia, and various other global locations. PSMN069-100YS,115 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PSMN069-100YS,115 Nexperia

PSMN069-100YS,115 electronic component of Nexperia
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See Product Specifications
Part No.PSMN069-100YS,115
Manufacturer: Nexperia
Category: MOSFET
Description: MOSFET Single NChannel 100V 68A 56W 130mOhms
Datasheet: PSMN069-100YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6313 ea
Line Total: USD 0.63

Availability - 5019
Ship by Mon. 22 Jul to Wed. 24 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1455
Ship by Tue. 16 Jul to Mon. 22 Jul
MOQ : 1500
Multiples : 1500
1500 : USD 0.2859
3000 : USD 0.2801
9000 : USD 0.2544
24000 : USD 0.2525

11640
Ship by Tue. 16 Jul to Mon. 22 Jul
MOQ : 1500
Multiples : 1500
1500 : USD 0.26
3000 : USD 0.26
6000 : USD 0.26
7500 : USD 0.26
22500 : USD 0.26

5019
Ship by Mon. 22 Jul to Wed. 24 Jul
MOQ : 1
Multiples : 1
1 : USD 0.6313
10 : USD 0.5336
100 : USD 0.3795
500 : USD 0.3312
1000 : USD 0.3162
1500 : USD 0.2599
3000 : USD 0.2438
9000 : USD 0.2438
24000 : USD 0.2438

1455
Ship by Tue. 16 Jul to Mon. 22 Jul
MOQ : 1500
Multiples : 1500
1500 : USD 0.2859
3000 : USD 0.2801
9000 : USD 0.2544
24000 : USD 0.2525

1455
Ship by Tue. 16 Jul to Mon. 22 Jul
MOQ : 1500
Multiples : 1500
1500 : USD 0.2837
3000 : USD 0.2785
9000 : USD 0.2587

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the PSMN069-100YS,115 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN069-100YS,115 and other electronic components in the MOSFET category and beyond.

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PSMN069-100YS N-channel LFPAK 100 V 72.4 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10V --17 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --56 W tot mb dissipation T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =5A --130m DSon GS D resistance T = 100 C see Figure 12 j V =10V I =5A - 56.6 72.4 m GS D T =25C see Figure 13 jPSMN069-100YS Nexperia N-channel LFPAK 100 V 72.4 m standard level MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10V I =15A -4.8 -nC GD GS D V =50 V see Figure 14 DS Q total gate charge - 14 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --24 mJ DS(AL)S GS j(init) drain-source I =17A V 100 V D sup avalanche energy unclamped R =50 GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN069-100YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN069-100YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 25 October 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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