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X-On Electronics has gained recognition as a prominent supplier of PSMN0R9-25YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN0R9-25YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN0R9-25YLC,115 Nexperia

PSMN0R9-25YLC,115 electronic component of Nexperia
PSMN0R9-25YLC,115 Nexperia
PSMN0R9-25YLC,115 MOSFETs
PSMN0R9-25YLC,115  Semiconductors

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See Product Specifications
Part No. PSMN0R9-25YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 25V 0.99 mOhms
Datasheet: PSMN0R9-25YLC,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.2875 ea
Line Total: USD 2.29 
Availability - 66074
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1455
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1500
Multiples : 1500
1500 : USD 0.8875
3000 : USD 0.875
4500 : USD 0.8625

66074
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 2.2875
10 : USD 1.524
100 : USD 1.0769
250 : USD 1.0571
500 : USD 0.9339
1000 : USD 0.8052
1500 : USD 0.8041
9000 : USD 0.8041

50925
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1500
Multiples : 1500
1500 : USD 0.9598
9000 : USD 0.9279

334
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 99
Multiples : 1
99 : USD 1.4272

88755
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 455
Multiples : 1
455 : USD 1.0324
500 : USD 0.9885
1000 : USD 0.9336

1455
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1500
Multiples : 1500
1500 : USD 0.9598
9000 : USD 0.9279

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN0R9-25YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN0R9-25YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Ultra low QG, QGD and QOSS for high qualified to 175C system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low Rdson and low parasitic inductance 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 25 V DS j 1 I drain current T = 25 C see Figure 1 --100A D mb P total power dissipation T = 25 C see Figure 2 --272W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I =25A - 0.95 1.25 m DSon GS D resistance T = 25 C see Figure 12 j V =10V I =25A - 0.75 0.99 m GS D T = 25 C see Figure 12 jPSMN0R9-25YLC Nexperia N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V = 4.5 V I =25A -14 -nC GD GS D V =12V see Figure 14 DS see Figure 15 Q total gate charge V = 4.5 V I =25A -51 -nC G(tot) GS D V =12V see Figure 15 DS see Figure 14 1 Continuous current is limited by package 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN0R9-25YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 4 July 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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