X-On Electronics has gained recognition as a prominent supplier of PSMN0R9-30YLD MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN0R9-30YLD MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN0R9-30YLD Nexperia

PSMN0R9-30YLD electronic component of Nexperia
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Part No.PSMN0R9-30YLD
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, N CH, 30V, 100A, SOT-669-4
Datasheet: PSMN0R9-30YLD Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 1.9902 ea
Line Total: USD 199.02 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 100
Multiples : 1
100 : USD 1.9902
500 : USD 1.6636
1000 : USD 1.2797
5000 : USD 1.2711

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
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We are delighted to provide the PSMN0R9-30YLD from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN0R9-30YLD and other electronic components in the MOSFETs category and beyond.

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PSMN0R9-30YLD N-channel 30 V, 0.87 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 11 November 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits Ultra low Q , Q and Q for high system efficiency, especially at higher switching G GD OSS frequencies Superfast switching with soft-recovery s-factor > 1 Low spiking and ringing for low EMI designs Unique SchottkyPlus technology Schottky-like performance with < 1 A leakage at 25 C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package no glue, no wire bonds, qualified to 150 C Wave solderable exposed leads for optimal visual solder inspection 3. Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control Power OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current T = 25 C V = 10 V Fig. 2 1 - - 100 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 349 W tot mb Scan or click this QR code to view the latest information for this product LFPAK56NXP Semiconductors PSMN0R9-30YLD N-channel 30 V, 0.87 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit T junction temperature -55 - 150 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 0.79 1.09 m DSon GS D j resistance Fig. 10 V = 10 V I = 25 A T = 25 C - 0.65 0.87 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 25 A V = 15 V - 13.5 - nC GD GS D DS Fig. 12 Fig. 13 Q total gate charge V = 4.5 V I = 25 A V = 15 V - 51 - nC G(tot) GS D DS Fig. 12 Fig. 13 Source-drain diode S softness factor I = 25 A V = 0 V dI /dt = -100 A/s - 0.9 - S GS S V = 15 V Fig. 16 DS 1 Continuous current is limited by package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source mbb076 S 4 G gate mb D mounting base connected to drain 1 2 3 4 LFPAK56 Power- SO8 (SOT1023) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN0R9-30YLD LFPAK56 Plastic single-ended surface-mounted package (LFPAK56) 4 SOT1023 Power-SO8 leads PSMN0R9-30YLD All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 11 November 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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