X-On Electronics has gained recognition as a prominent supplier of PSMN1R0-25YLD MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN1R0-25YLD MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN1R0-25YLD Nexperia

PSMN1R0-25YLD electronic component of Nexperia
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Part No.PSMN1R0-25YLD
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, N-CH, 25V, 100A, SOT-669-4
Datasheet: PSMN1R0-25YLD Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0666 ea
Line Total: USD 2.07 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 2.0666
10 : USD 1.6736
100 : USD 1.2656
500 : USD 1.0088
1000 : USD 0.8247
5000 : USD 0.8086

   
Manufacturer
Product Category
Transistor Polarity
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Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
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Svhc
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We are delighted to provide the PSMN1R0-25YLD from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R0-25YLD and other electronic components in the MOSFETs category and beyond.

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PSMN1R0-25YLD N-channel 25 V, 1.0 m, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits 100% Avalanche tested at I = 100 A (AS) Ultra low Q , Q and Q for high system efficiency, especially at higher switching G GD OSS frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs Unique SchottkyPlus technology Schottky-like performance with < 1 A leakage at 25 C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package no glue, no wire bonds, qualified to 175 C Wave solderable exposed leads for optimal visual solder inspection 3. Applications On-board DC:DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control Power OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 25 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 100 A D GS mb Scan or click this QR code to view the latest information for this productNXP Semiconductors PSMN1R0-25YLD N-channel 25 V, 1.0 m, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit P total power dissipation T = 25 C Fig. 1 - - 160 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 0.89 1 m DSon GS D j resistance Fig. 10 V = 4.5 V I = 25 A T = 25 C - 1.19 1.43 m GS D j Fig. 10 Dynamic characteristics Q total gate charge I = 25 A V = 12 V V = 10 V - 71.8 - nC G(tot) D DS GS Fig. 12 Fig. 13 I = 25 A V = 12 V V = 4.5 V - 33.2 - nC D DS GS Fig. 12 Fig. 13 I = 0 A V = 0 V V = 10 V - 39.7 - nC D DS GS Q gate-drain charge I = 25 A V = 12 V V = 4.5 V - 8 - nC GD D DS GS Fig. 12 Fig. 13 Source-drain diode S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 0.9 - S S GS V = 12 V Fig. 16 DS 1 Continuous current is limited by package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R0-25YLD LFPAK56 Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56 Power-SO8) 4 leads PSMN1R0-25YLD All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2016. All rights reserved Product data sheet 19 April 2016 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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