PSMN1R8-40YLC,115 Nexperia

PSMN1R8-40YLC N-channel 40 V 1.8 m logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175C Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads Ultra low Rdson and low parasitic inductance 1.3 Applications DC-to-DC converters Load switching Power OR-ing Server power supplies Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current T = 25 C V = 10 V Fig. 1 1 - - 100 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 272 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 1.8 2.1 m DSon GS D j resistance Fig. 12 V = 10 V I = 25 A T = 25 C - 1.5 1.8 m GS D j Fig. 12 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 25 A V = 20 V - 10.9 - nC GD GS D DS Fig. 15 Fig. 14Nexperia PSMN1R8-40YLC N-channel 40 V 1.8 m logic level MOSFET in LFPAK using NextPower technology Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V = 4.5 V I = 25 A V = 20 V - 45 - nC G(tot) GS D DS Fig. 15 Fig. 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK Power- drain SO8 (SOT669) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R8-40YLC LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 40 V DGR j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 1 - 100 A D GS mb V = 10 V T = 100 C Fig. 1 1 - 100 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 1128 A DM p mb P total power dissipation T = 25 C Fig. 2 - 272 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 22 August 2012 2 / 14