PSMN4R0-60YS,115 Nexperia

PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 m standard level FET 14 May 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of telecom, industrial and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low R and low gate charge DSon High efficiency in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 3. Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies Telecom power 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current T = 25 C Fig. 2 1 - - 100 A D mb P total power dissipation T = 25 C Fig. 1 - - 130 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 15 A T = 100 C - - 8.3 m DSon GS D j resistance Fig. 12 V = 10 V I = 15 A T = 25 C - 3.6 4 m GS D j Fig. 13Nexperia PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 m standard level FET Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V = 10 V I = 75 A V = 30 V - 11.2 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 56 - nC G(tot) Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 100 A - - 170 mJ DS(AL)S GS j(init) D source avalanche V 60 V R = 50 unclamped sup GS energy 1 Continuous current is limited by package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb D 1 S source 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R0-60YS LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 60 V DGR j j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 130 W tot mb I drain current T = 100 C Fig. 2 - 74 A D mb PSMN4R0-60YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 May 2015 2 / 13