X-On Electronics has gained recognition as a prominent supplier of PSMN7R5-30MLDX MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN7R5-30MLDX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN7R5-30MLDX Nexperia

PSMN7R5-30MLDX electronic component of Nexperia
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Part No.PSMN7R5-30MLDX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET 30V N-Channel 7.5mOhm
Datasheet: PSMN7R5-30MLDX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7249 ea
Line Total: USD 0.72 
Availability - 2317
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2317
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7249
10 : USD 0.5302
100 : USD 0.3652
500 : USD 0.2904
1500 : USD 0.2211
9000 : USD 0.1925
49500 : USD 0.1914

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN7R5-30MLDX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN7R5-30MLDX and other electronic components in the MOSFETs category and beyond.

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PSMN7R5-30MLD N-channel 30 V, 7.5 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 11 August 2015 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits Ultra low Q , Q and Q for high system efficiency, especially at higher switching G GD OSS frequencies Superfast switching with soft-recovery s-factor > 1 Low spiking and ringing for low EMI designs Unique SchottkyPlus technology Schottky-like performance with < 1 A leakage at 25 C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package no glue, no wire bonds, qualified to 175 C Exposed leads for optimal visual solder inspection 3. Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current T = 25 C V = 10 V Fig. 2 - - 57 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 45 W tot mbNexperia PSMN7R5-30MLD N-channel 30 V, 7.5 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 10 A T = 25 C - 8.2 10.3 m DSon GS D j resistance Fig. 10 V = 10 V I = 15 A T = 25 C - 6.3 7.6 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 15 A V = 15 V - 1.7 2.5 nC GD GS D DS Fig. 12 Fig. 13 Q total gate charge V = 4.5 V I = 15 A V = 15 V - 5.8 8.8 nC G(tot) GS D DS Fig. 12 Fig. 13 Source-drain diode S softness factor I = 15 A V = 0 V dI /dt = -100 A/s - 1.2 - S GS S V = 15 V Fig. 16 DS 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source mbb076 S 4 G gate mb D mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R5-30MLD LFPAK33 Plastic single ended surface mounted package SOT1210 (LFPAK33) 8 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN7R5-30MLD 7D530L PSMN7R5-30MLD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 11 August 2015 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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