PSMN7R8-120PS Nexperia

PSMN7R8-120PS N-channel 120V 7.9m standard level MOSFET in TO220 25 January 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 2. Features and benefits High efficiency due to low switching and conduction losses TO220 package Suitable for standard level gate drive 3. Applications AC-to-DC power supply Synchronous rectification Motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 120 V DS j j I drain current T = 25 C V = 10 V Fig. 1 - - 70 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 349 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 4.7 6.72 7.9 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 60 V - 50.5 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 167 - nC G(tot) Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 70 A - - 386 mJ DS(AL)S GS j(init) D source avalanche V 120 V unclamped R = 50 sup GS energy Fig. 3 Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors PSMN7R8-120PS N-channel 120V 7.9m standard level MOSFET in TO220 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D drain 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R8-120PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN7R8-120PS PSMN7R8-120PS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 120 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 120 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 70 A D GS mb V = 10 V T = 100 C Fig. 1 - 70 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 280 A DM p mb PSMN7R8-120PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved Product data sheet 25 January 2013 2 / 13