PSMN2R0-30PL NXP

PSMN2R0-30PL N-channel 30 V 2.1 m logic level MOSFET Rev. 01 24 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switiching Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j I drain current T =25C V =10V 1 - - 100 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --211 W tot mb dissipation Dynamic characteristics Q gate-drain charge V = 4.5 V I =25A -16 - nC GD GS D V = 12 V see Figure 13 DS Q total gate charge - 55 - nC G(tot) see Figure 14 Static characteristics R drain-source V = 4.5 V I =15A -2 2.8 m DSon GS D on-state resistance T =25C j V =10V I =15A 2 -1.7 2.1 m GS D T = 25 C see Figure 12 j 1 Continuous current is limited by package. 2 Measured 3 mm from package.NXP Semiconductors PSMN2R0-30PL N-channel 30 V 2.1 m logic level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-30PL TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB PSMN2R0-30PL 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 24 June 2009 2 of 13