Product Information

PSMN2R0-30YLE

PSMN2R0-30YLE electronic component of Nexperia

Datasheet
MOSFET, N-CH, 30V, 100A, LFPAK
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0363 ea
Line Total: USD 2.04

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

PSMN2R0-30YLE
Nexperia

1 : USD 2.0546
10 : USD 1.7124
100 : USD 1.4373
500 : USD 1.3053

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PSMN2R0-30YLE N-channel 30 V 2 m logic level MOSFET in LFPAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low Rdson for low conduction losses 1.3 Applications Electronic fuse Hot swap Load switch Soft start 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j I drain current T = 25 C V = 10 V Fig. 1 1 - - 100 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 272 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.7 2 m DSon GS D j resistance Fig. 12 V = 4.5 V I = 25 A T = 25 C - 3 3.5 m GS D j Fig. 12 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 25 A V = 15 V - 13.8 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge V = 10 V I = 25 A V = 15 V - 87 - nC G(tot) GS D DS Fig. 14 Fig. 15 Scan or click this QR code to view the latest information for this productNXP Semiconductors PSMN2R0-30YLE N-channel 30 V 2 m logic level MOSFET in LFPAK Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 100 A - - 370 mJ DS(AL)S GS j(init) D source avalanche V 30 V unclamped R = 50 sup GS energy Fig. 3 1 Capped at 100A due to package 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK Power- drain SO8 (SOT669) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-30YLE LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 4. Marking Table 4. Marking codes Type number Marking code PSMN2R0-30YLE 2R030 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V drain-gate voltage T 175 C T 25 C R = 20 k - 30 V DGR j j GS V gate-source voltage -20 20 V GS PSMN2R0-30YLE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 12 October 2012 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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