Product Information

PSMN2R1-40PL

PSMN2R1-40PL electronic component of NXP

Datasheet
MOSFET, N-CH, 40V, 150A, TO-220
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.041 ea
Line Total: USD 2.04

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 2.041
10 : USD 1.9175
25 : USD 1.5925
100 : USD 1.4365
250 : USD 1.2545
500 : USD 1.1895

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
LoadingGif

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Additional Infomation About Product

PSMN2R1-40PL N-channel 40 V, 2.2 m logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3. Applications Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 10 V T = 25 C Fig. 1 1 - - 150 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 293 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.8 2.2 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q total gate charge V = 10 V I = 25 A V = 32 V - 168.9 - nC G(tot) GS D DS Fig. 13 Fig. 14 Q gate-drain charge - 29.6 - nC GD Avalanche ruggedness E non-repetitive drain- I = 150 A V 40 V R = 50 - - 490.3 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy Fig. 3 1 Continuous current is limited by package. Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors PSMN2R1-40PL N-channel 40 V, 2.2 m logic level MOSFET in SOT78 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R1-40PL TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN2R1-40PL PSMN2R1-40PL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage -20 20 V GS I drain current T = 100 C V = 10 V Fig. 1 1 - 150 A D mb GS T = 25 C V = 10 V Fig. 1 1 - 150 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 1075 A DM mb p PSMN2R1-40PL All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved Product data sheet 1 February 2013 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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