X-On Electronics has gained recognition as a prominent supplier of PSMN2R2-25YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R2-25YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN2R2-25YLC,115 Nexperia

PSMN2R2-25YLC,115 electronic component of Nexperia
PSMN2R2-25YLC,115 Nexperia
PSMN2R2-25YLC,115 MOSFETs
PSMN2R2-25YLC,115  Semiconductors

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See Product Specifications
Part No. PSMN2R2-25YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 25 V 100A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet: PSMN2R2-25YLC,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5375 ea
Line Total: USD 1.54 
Availability - 1331
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 1500
Multiples : 1500
1500 : USD 0.403
3000 : USD 0.3813
4500 : USD 0.3813
6000 : USD 0.375
7500 : USD 0.3687

1331
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ : 1
Multiples : 1
1 : USD 1.5375
10 : USD 0.9324
100 : USD 0.5676
500 : USD 0.4543
1000 : USD 0.4521
1500 : USD 0.4048
3000 : USD 0.3421
9000 : USD 0.3069
24000 : USD 0.3058

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN2R2-25YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R2-25YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN2R2-25YLC N-channel 25 V 2.4 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD and QOSS for high resistance system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source 25 C T 175C --25 V DS j voltage 1 I drain current T =25C V =10V --100A D mb GS see Figure 1 total power T = 25 C see Figure 2 --106W P tot mb dissipation T junction -55 - 175 C j temperature Static characteristics R drain-source V =4.5 V I =25A - 2.6 3.15 m DSon GS D on-state T =25C see Figure 12 j resistance =10V I =25A -2 2.4 m V GS D T =25C see Figure 12 jPSMN2R2-25YLC Nexperia N-channel 25 V 2.4 m logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5 V I =25A -5.2 -nC GD GS D V =12V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =25A -18 -nC G(tot) GS D V =12V see Figure 15 DS see Figure 14 1 Continuous current is limited by package 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base 1234 connected to drain SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R2-25YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 4. Marking Table 4. Marking codes 1 Type number Marking code PSMN2R2-25YLC 2C225L 1 % = placeholder for manufacturing site code. PSMN2R2-25YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 2 May 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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