X-On Electronics has gained recognition as a prominent supplier of PSMN2R0-60ES,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R0-60ES,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN2R0-60ES,127 Nexperia

PSMN2R0-60ES,127 electronic component of Nexperia
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Part No.PSMN2R0-60ES,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 60V 2.2 mOhms
Datasheet: PSMN2R0-60ES,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.1064
10 : USD 1.8478
100 : USD 1.5999
250 : USD 1.5199
500 : USD 1.4567
1000 : USD 1.4275
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.9934
50 : USD 3.2097
100 : USD 2.9244
500 : USD 2.368
1000 : USD 1.9971
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.8758
10 : USD 2.6276
100 : USD 2.3435
250 : USD 2.1396
500 : USD 1.9575
1000 : USD 1.6957
2500 : USD 1.6957
5000 : USD 1.6616
10000 : USD 1.6161
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN2R0-60ES,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R0-60ES,127 and other electronic components in the MOSFETs category and beyond.

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PSMN2R0-60ES N-channel 60 V 2.2 m standard level MOSFET in I2PAK Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 total power dissipation T =25C see Figure 2 --338W P tot mb junction temperature -55 - 175 C T j Static characteristics 2 drain-source on-state V =10V I =25A -1.8 2.2 m R DSon GS D resistance T =25 C see Figure 12 j V =10V I =25A -3 3.5 m GS D T = 100 C see Figure 12 j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =75A -32 -nC GD GS D V = 30 V see Figure 14 DS total gate charge - 137 - nC Q G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --913mJ DS(AL)S GS j(init) drain-source avalanche I = 120 A V 60 V D sup energy R =50 Unclamped GSPSMN2R0-60ES Nexperia N-channel 60 V 2.2 m standard level MOSFET in I2PAK 1 Continuous current limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-60ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN2R0-60ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 19 April 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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