PSMN075-100MSEX Nexperia

PSMN075-100MSE N-channel 100 V 71 m standard level MOSFET in LFPAK33 designed specifically for PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling the next generation of Power-over-Ethernet (PoE) systems capable of delivering up to 100W to each powered device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan- tilt-zoom CCTV cameras, for example, are placing increased demands on the power sourcing equipment (PSE) in terms of soft-start procedures, resilience to short- circuits, thermal management and power density. Part of Nexperias NextPower Live MOSFET portfolio, the PSMN075-100MSE has been designed specifically to compliment the latest PoE controllers, offering both superior linear mode operation and very low RDS(on) in a cost-effective, industry compatible, LFPAK33 package. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Low Rdson for low conduction losses Ultra reliable LFPAK33 package no glue, no wires, 175C Very low I DSS 3. Applications IEEE802.3at and proprietary solutions - (type 2) Suitable for PoE applications upto 30W Use PSMN040-100MSE for higher power requirements 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 1 - - 18 A D j GS P total power dissipation T = 25 C Fig. 2 - - 65 W tot mb Static characteristics R drain-source on-state V = 10 V I = 5 A T = 25 C Fig. 12 - 57 71 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 10 V I = 5 A V = 50 V - 5.3 - nC GD GS D DS T 25 C Fig. 14 Fig. 15 jNexperia PSMN075-100MSE N-channel 100 V 71 m standard level MOSFET in LFPAK33 designed specifically for PoE applications Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V = 10 V I = 5 A V = 50 V - 16.4 - nC G(tot) GS D DS T = 25 C Fig. 14 Fig. 15 j Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 18 A - - 25 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source mbb076 S 4 G gate mb D mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN075-100MSE LFPAK33 Plastic single ended surface mounted package (LFPAK33) 4 SOT1210 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN075-100MSE M75E10 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS PSMN075-100MSE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 26 March 2013 2 / 13