X-On Electronics has gained recognition as a prominent supplier of PSMN010-80YL MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN010-80YL MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN010-80YL Nexperia

PSMN010-80YL electronic component of Nexperia
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Part No.PSMN010-80YL
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, N-CH, 80V, 84A, SOT-669-4
Datasheet: PSMN010-80YL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.795 ea
Line Total: USD 1.8 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.795
10 : USD 1.4189
100 : USD 1.1093
500 : USD 0.9013
1000 : USD 0.8765

   
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Product Range
Automotive Qualification Standard
Msl
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN010-80YL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN010-80YL and other electronic components in the MOSFETs category and beyond.

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PSMN010-80YL N-channel 80 V, 10 m logic level MOSFET in LFPAK56 14 April 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low R and low gate charge DSon Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package 3. Applications Synchronous rectification in power supply equipment Chargers & adaptors with V < 10 V out Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 80 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 84 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 194 W tot mb Static characteristics R drain-source on-state V = 5 V I = 25 A T = 25 C Fig. 11 - 8.1 11 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 25 A V = 64 V V = 5 V - 13.2 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 j Scan or click this QR code to view the latest information for this productNXP Semiconductors PSMN010-80YL N-channel 80 V, 10 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN010-80YL LFPAK56 Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN010-80YL 010L80 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 80 V DS j V drain-gate voltage R = 20 k - 80 V DGR GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 194 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 84 A D GS mb V = 5 V T = 100 C Fig. 2 - 59.3 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 336 A DM p mb T storage temperature -55 175 C stg PSMN010-80YL All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2016. All rights reserved Product data sheet 14 April 2016 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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