PMZB290UN NXP

PMZB290UN 20 V, single N-channel Trench MOSFET Rev. 1 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Low threshold voltage Trench MOSFET technology Ultra thin package profile with 0.37 mm height 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C --1 A D GS amb Static characteristics R drain-source on-state V =4.5 V I = 200 mA T = 25 C - 290 350 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT883BPMZB290UN NXP Semiconductors 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2S source 3 3 D drain 2 G Transparent top view S 017aaa253 SOT883B (DFN1006B-3) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB290UN DFN1006B-3 Leadless ultra small plastic package 3 solder lands SOT883B body 1.0 0.6 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code PMZB290UN 0000 0101 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description PMZB290UN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 11 May 2012 2 of 15