X-On Electronics has gained recognition as a prominent supplier of PMZB350UPE,315 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMZB350UPE,315 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMZB350UPE,315 Nexperia

PMZB350UPE,315 electronic component of Nexperia
PMZB350UPE,315 Nexperia
PMZB350UPE,315 MOSFETs
PMZB350UPE,315  Semiconductors

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See Product Specifications
Part No. PMZB350UPE,315
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 20 V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount DFN1006B-3
Datasheet: PMZB350UPE,315 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.1021 ea
Line Total: USD 1.02 
Availability - 135
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
135
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 10
Multiples : 10
10 : USD 0.1021
100 : USD 0.0812
300 : USD 0.0606
1000 : USD 0.0486
5000 : USD 0.0437
10000 : USD 0.0413

7017
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.3913
10 : USD 0.2388
100 : USD 0.144
500 : USD 0.1001
1000 : USD 0.0814
2500 : USD 0.077
5000 : USD 0.0693
10000 : USD 0.0561
20000 : USD 0.055

19400
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 20000
Multiples : 20000
20000 : USD 0.0596
30000 : USD 0.058
50000 : USD 0.0558

970000
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 7300
Multiples : 1
7300 : USD 0.0642

16030
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1420
Multiples : 1
1420 : USD 0.0915

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the PMZB350UPE,315 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMZB350UPE,315 and other electronic components in the MOSFETs category and beyond.

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PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 1.8 kV ESD protected 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -1.4 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -0.3 A T = 25 C - 330 450 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMZB350UPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 3 D drain G Transparent top view DFN1006B-3 (SOT883B) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB350UPE DFN1006B-3 Leadless ultra small plastic package 3 solder lands body 1.0 x SOT883B 0.6 x 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code PMZB350UPE 0100 1100 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB350UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 August 2012 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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