StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D V 100V DSS Battery powered circuits Half-bridge and full-bridge topologies R typ. 7.2m DS(on) Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundant power switches I 97A D (Silicon Limited) DC/DC and AC/DC converters DC/AC Inverters S Benefits D G Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA TO-220AB Enhanced body diode dV/dt and dI/dt Capability IRF100B202 Lead-Free, RoHS Compliant, Halogen-Free G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF100B202 TO-220 Tube 50 IRF100B202 25 100 I = 58A D 80 20 60 T = 125C J 15 40 10 T = 25C J 20 5 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback August 18, 2014 R , Drain o -S urce On esi tance (m -t o R s ) DS(on) I , Drain Current (A) D IRF100B202 Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 97 D C GS I T = 100C Continuous Drain Current, V 10V 68 A D C GS I Pulsed Drain Current 380 DM P T = 25C Maximum Power Dissipation 221 W D C Linear Derating Factor 1.5 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E 189 AS (Thermally limited) Single Pulse Avalanche Energy mJ E Single Pulse Avalanche Energy 292 AS (Thermally limited) E Single Pulse Avalanche Energy Tested Value 217 AS (tested) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.68 JC R Case-to-Sink, Flat Greased Surface 0.50 C/W CS Junction-to-Ambient R 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 7.2 8.6 V = 10V, I = 58A m DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D 20 V =100 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.4 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.113mH, R = 50 , I = 58A, V =10V. Jmax J G AS GS I 58A, di/dt 1316A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J , starting T = 25C, L = 1mH, R = 50 , I = 24A, V =10V. Limited by T Jmax J G AS GS This value determined from sample failure population, starting T =25C, L= 0.113mH, R = 50, I =58A, V =10V. J G AS GS 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback August 18, 2014