PMZB290UNE NXP

PMZB290UNE 20 V, single N-channel Trench MOSFET Rev. 3 23 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage Ultra thin package profile of 0.37mm Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C --1 A D GS amb Static characteristics R drain-source on-state V =4.5 V I = 500 mA T = 25 C - 290 380 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT883BPMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2S source 3 3 D drain 2 G Transparent top view DFN1006B-3 (SOT883B) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB290UNE DFN1006B-3 Leadless ultra small plastic package 3 solder lands SOT883B body 1.0 x 0.6 x 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code PMZB290UNE 0000 0110 1 For DFN1006B-3 (SOT883B) binary marking code description see Figure 1. 4.1 Binary marking code description PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description PMZB290UNE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 23 March 2012 2 of 15