StrongIRFET IRL40B209 HEXFET Power MOSFET Application Brushed Motor drive applications V 40V DSS BLDC Motor drive applications D R typ. Battery powered circuits 1.0m DS(on) Half-bridge and full-bridge topologies max 1.25m Synchronous rectifier applications G I 414A Resonant mode power supplies D (Silicon Limited) S OR-ing and redundant power switches I 195A D (Package Limited) DC/DC and AC/DC converters DC/AC Inverters Benefits S D Optimized for Logic Level Drive G Improved Gate, Avalanche and Dynamic dV/dt Ruggedness TO-220AB Fully Characterized Capacitance and Avalanche SOA IRL40B209 Enhanced body diode dV/dt and dI/dt Capability Lead-Free RoHS Compliant, Halogen-Free G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRL40B209 TO-220 Tube 50 IRL40B209 6 450 I = 100A D 400 5 Limited By Package 350 4 300 250 3 200 T = 125C 2 J 150 100 1 T = 25C 50 J 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) V Gate -to -Source Voltage (V) C GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback May 18, 2015 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRL40B209 Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 414 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 293 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I Pulsed Drain Current 1707 DM P T = 25C Maximum Power Dissipation 375 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 C T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E 730 AS (Thermally limited) Single Pulse Avalanche Energy mJ E 1420 AS (Thermally limited) Single Pulse Avalanche Energy I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 0.4 JC R Case-to-Sink, Flat Greased Surface C/W 0.50 CS R Junction-to-Ambient 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.031 V/C Reference to 25C, I = 5mA D (BR)DSS J 1.0 1.25 V = 10V, I = 100A GS D R Static Drain-to-Source On-Resistance m DS(on) 1.2 1.6 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.0 2.4 V V = V , I = 250A GS(th) DS GS D 1.0 V =40 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.1 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.15mH,R = 50, I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 930A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 53A, V =10V. Jmax J G AS GS Pulse drain current is limited at 780A by source bonding technology. 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback May 18, 2015