X-On Electronics has gained recognition as a prominent supplier of IRG7S313UTRLPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRG7S313UTRLPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRG7S313UTRLPBF Infineon

IRG7S313UTRLPBF electronic component of Infineon
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Part No.IRG7S313UTRLPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 330V 40A D2PAK
Datasheet: IRG7S313UTRLPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.637
10 : USD 1.3957
100 : USD 1.2346
500 : USD 1.1608
800 : USD 1.1208
2400 : USD 1.1208
4800 : USD 1.1208
9600 : USD 1.1208
24800 : USD 1.0837
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Forward Transconductance - Min
Power Dissipation
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRG7S313UTRLPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRG7S313UTRLPBF and other electronic components in the MOSFETs category and beyond.

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IRG7S313UPbF Key Parameters Features V min 330 V Advanced Trench IGBT Technology CE Optimized for Sustain and Energy Recovery V typ. I = 20A 1.35 V CE(ON) C circuits in PDP applications I max T = 25C 160 A RP C TM Low V and Energy per Pulse (E ) CE(on) PULSE T max 150 C J for improved panel efficiency High repetitive peak current capability Lead Free package C E C G G 2 D Pak E IRG7S313UPbF n-channel GC E Gate Collector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced TM trench IGBT technology to achieve low V and low E rating per silicon area which improve panel CE(on) PULSE efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter Max. Units V 30 Gate-to-Emitter Voltage V GE I T = 25C Continuous Collector Current, V 15V 40 C C GE I T = 100C Continuous Collector, V 15V 20 A C C GE I T = 25C Repetitive Peak Current 160 RP C P T = 25C 78 Power Dissipation W D C P T = 100C Power Dissipation 31 D C Linear Derating Factor 0.63 W/C T Operating Junction and -40 to + 150 J T Storage Temperature Range C STG Soldering Temperature for 10 seconds 300 Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.6 C/W JC www.irf.com 1 9/11/09 Electrical Characteristics T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250 A BV Collector-to-Emitter Breakdown Voltage 330 V GE CE CES V / T Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient 0.4 V/C CE CES J = 15V, I = 12A V 1.21 1.45 GE CE V = 15V, I = 20A 1.35 GE CE V Static Collector-to-Emitter Voltage V = 15V, I = 40A CE(on) 1.75 V GE CE V = 15V, I = 60A 2.14 GE CE V = 15V, I = 20A, T = 150C 1.41 GE CE J V V = V , I = 1.0mA Gate Threshold Voltage 2.2 4.7 V GE(th) CE GE CE V /T Gate Threshold Voltage Coefficient -10 mV/C GE(th) J I V = 330V, V = 0V Collector-to-Emitter Leakage Current 1.0 10 CES CE GE V = 330V, V = 0V, T = 125C 25 150 A CE GE J V = 330V, V = 0V, T = 150C 75 CE GE J I V = 30V Gate-to-Emitter Forward Leakage 100 nA GES GE V = -30V Gate-to-Emitter Reverse Leakage -100 GE g V = 25V, I = 12A Forward Transconductance 47 S fe CE CE V = 240V, I = 12A, V = 15V Q Total Gate Charge 33 nC CE C GE g Q Gate-to-Collector Charge 12 gc t Turn-On delay time 1.0 I = 12A, V = 196V d(on) C CC t Rise time 13 ns R = 10, L=210 H r G t Turn-Off delay time 65 T = 25C d(off) J t Fall time 68 f t Turn-On delay time 11 I = 12A, V = 196V d(on) C CC t Rise time 14 ns R = 10, L=200 H, L = 150nH r G S t Turn-Off delay time 86 T = 150C d(off) J t Fall time 190 f t Shoot Through Blocking Time 100 ns V = 240V, V = 15V, R = 5.1 st CC GE G L = 220nH, C= 0.20 F, V = 15V GE 480 E V = 240V, R = 5.1, T = 25C Energy per Pulse J PULSE CC G J L = 220nH, C= 0.20 F, V = 15V GE 570 V = 240V, R = 5.1, T = 100C CC G J Class 1C Human Body Model (Per JEDEC standard JESD22-A114) ESD Class B Machine Model (Per EIA/JEDEC standard EIA/JESD22-A115) C V = 0V Input Capacitance 880 ies GE C V = 30V Output Capacitance 47 pF oes CE C = 1.0MHz Reverse Transfer Capacitance 26 res L Internal Collector Inductance 4.5 Between lead, C nH 6mm (0.25in.) L Internal Emitter Inductance 7.5 from package E and center of die contact Half sine wave with duty cycle = 0.05, ton=2 sec. R is measured at Pulse width 400s duty cycle 2%. 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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