IRG7S313UPbF Key Parameters Features V min 330 V Advanced Trench IGBT Technology CE Optimized for Sustain and Energy Recovery V typ. I = 20A 1.35 V CE(ON) C circuits in PDP applications I max T = 25C 160 A RP C TM Low V and Energy per Pulse (E ) CE(on) PULSE T max 150 C J for improved panel efficiency High repetitive peak current capability Lead Free package C E C G G 2 D Pak E IRG7S313UPbF n-channel GC E Gate Collector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced TM trench IGBT technology to achieve low V and low E rating per silicon area which improve panel CE(on) PULSE efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter Max. Units V 30 Gate-to-Emitter Voltage V GE I T = 25C Continuous Collector Current, V 15V 40 C C GE I T = 100C Continuous Collector, V 15V 20 A C C GE I T = 25C Repetitive Peak Current 160 RP C P T = 25C 78 Power Dissipation W D C P T = 100C Power Dissipation 31 D C Linear Derating Factor 0.63 W/C T Operating Junction and -40 to + 150 J T Storage Temperature Range C STG Soldering Temperature for 10 seconds 300 Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.6 C/W JC www.irf.com 1 9/11/09 Electrical Characteristics T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250 A BV Collector-to-Emitter Breakdown Voltage 330 V GE CE CES V / T Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient 0.4 V/C CE CES J = 15V, I = 12A V 1.21 1.45 GE CE V = 15V, I = 20A 1.35 GE CE V Static Collector-to-Emitter Voltage V = 15V, I = 40A CE(on) 1.75 V GE CE V = 15V, I = 60A 2.14 GE CE V = 15V, I = 20A, T = 150C 1.41 GE CE J V V = V , I = 1.0mA Gate Threshold Voltage 2.2 4.7 V GE(th) CE GE CE V /T Gate Threshold Voltage Coefficient -10 mV/C GE(th) J I V = 330V, V = 0V Collector-to-Emitter Leakage Current 1.0 10 CES CE GE V = 330V, V = 0V, T = 125C 25 150 A CE GE J V = 330V, V = 0V, T = 150C 75 CE GE J I V = 30V Gate-to-Emitter Forward Leakage 100 nA GES GE V = -30V Gate-to-Emitter Reverse Leakage -100 GE g V = 25V, I = 12A Forward Transconductance 47 S fe CE CE V = 240V, I = 12A, V = 15V Q Total Gate Charge 33 nC CE C GE g Q Gate-to-Collector Charge 12 gc t Turn-On delay time 1.0 I = 12A, V = 196V d(on) C CC t Rise time 13 ns R = 10, L=210 H r G t Turn-Off delay time 65 T = 25C d(off) J t Fall time 68 f t Turn-On delay time 11 I = 12A, V = 196V d(on) C CC t Rise time 14 ns R = 10, L=200 H, L = 150nH r G S t Turn-Off delay time 86 T = 150C d(off) J t Fall time 190 f t Shoot Through Blocking Time 100 ns V = 240V, V = 15V, R = 5.1 st CC GE G L = 220nH, C= 0.20 F, V = 15V GE 480 E V = 240V, R = 5.1, T = 25C Energy per Pulse J PULSE CC G J L = 220nH, C= 0.20 F, V = 15V GE 570 V = 240V, R = 5.1, T = 100C CC G J Class 1C Human Body Model (Per JEDEC standard JESD22-A114) ESD Class B Machine Model (Per EIA/JEDEC standard EIA/JESD22-A115) C V = 0V Input Capacitance 880 ies GE C V = 30V Output Capacitance 47 pF oes CE C = 1.0MHz Reverse Transfer Capacitance 26 res L Internal Collector Inductance 4.5 Between lead, C nH 6mm (0.25in.) L Internal Emitter Inductance 7.5 from package E and center of die contact Half sine wave with duty cycle = 0.05, ton=2 sec. R is measured at Pulse width 400s duty cycle 2%. 2 www.irf.com