PD - 95149 IRL2910S/LPbF HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount D Advanced Process Technology V = 100V DSS Ultra Low On-Resistance Dynamic dv/dt Rating R = 0.026 DS(on) Fast Switching G Fully Avalanche Rated I = 55A D Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- 2 TO-262 D Pak resistance in any existing surface mount package. The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2910L) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 55 D C GS I T = 100C Continuous Drain Current, V 10V 39 A D C GS I Pulsed Drain Current 190 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 520 mJ AS I Avalanche Current 29 A AR E Repetitive Avalanche Energy 20 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC C/W R Junction-to-Ambient ( PCB Mounted,steady-state)** 40 JA 04/19/04IRL2910S/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.026 V = 10V, I = 29A GS D R Static Drain-to-Source On-Resistance DS(on) 0.030 V = 5.0V, I = 29A GS D 0.040 V = 4.0V, I = 24A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 28 S V = 50V, I = 29A fs DS D 25 V = 100V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 140 I = 29A g D Q Gate-to-Source Charge 20 nC V = 80V gs DS Q Gate-to-Drain Mille) Charge 81 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 11 V = 50V d(on) DD t Rise Time 100 I = 29A r D ns t Turn-Off Delay Time 49 R = 1.4, V = 5.0V d(off) G GS t Fall Time 55 R = 1.7, See Fig. 10 f D Between lead, L Internal Source Inductance 7.5 S nH and center of die contact C Input Capacitance 3700 V = 0V iss GS C Output Capacitance 630 pF V = 25V oss DS C Reverse Transfer Capacitance 330 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 55 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 190 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 29A, V = 0V SD J S GS t Reverse Recovery Time 240 350 ns T = 25C, I = 29A rr J F Q Reverse RecoveryCharge 1.8 2.7 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Uses IRL2910 data and test conditions V = 25V, starting T = 25C, L = 1.2mH DD J R = 25, I = 29A. (See Figure 12) G AS I 29A, di/dt 490A/s, V V , SD DD (BR)DSS T 175C J ** When mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994.