DMN2024U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D Low-Input Capacitance V R Max (BR)DSS DS(ON) T = +25C A Fast Switching Speed ESD Protected Gate 25m V = 4.5V 6.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V Halogen and Antimony Free. Green Device (Note 3) 29m V = 2.5V 5.5A GS Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SOT23 (R ) yet maintain superior switching performance, which make it Case Material: Molded Plastic, Green Molding Compound. DS(ON) ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals: FinishMatte Tin Annealed over Copper Leadframe. Power-Management Functions e3 Solderable per MIL-STD-202, Method 208 DC-DC Converters Terminals Connections: See Diagram Below Motor Control Weight: 0.009 grams (Approximate) D D G G S ESD-Protected Gate Gate Protection S Diode Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2024U-7 SOT23 3000/Tape & Reel DMN2024U-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2024U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 10 V GSS Steady T = +25C 6.8 A A Continuous Drain Current (Note 6) V = 4.5V I GS D State 5.5 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 2.2 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 45 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.8 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) 159 C/W RJA Total Power Dissipation (Note 6) 1.4 W P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 92 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.5 - 0.9 V V V = V , I = 250A GS(TH) DS GS D 16 25 V = 4.5V, I = 6.5A GS D Static Drain-Source On-Resistance 18.5 29 m R V = 2.5V, I = 5.5A DS(ON) GS D 23 36 V = 1.8V, I = 3.5A GS D Diode Forward Voltage 0.8 1.2 V V V = 0V, I = 5A SD GS D DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 647 pF iss V = 10V, V = 0V DS GS Output Capacitance C 78 pF oss f = 1.0MHz Reverse Transfer Capacitance C 38 pF rss Gate Resistance R 628 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 7.1 nC g Gate-Source Charge Q 0.9 nC V = 4.5V, V = 10V, I = 6.5A gs GS DS D Gate-Drain Charge Q 0.7 nC gd Turn-On Delay Time t 98 ns D(ON) Turn-On Rise Time t 140 ns R V = 10V, V = 4.5V, DS GS R = 10, R = 6, I = 1A Turn-Off Delay Time t 1024 ns L G D D(OFF) Turn-Off Fall Time ns t 434 F Reverse Recovery Time 245 ns t I = 1.0A, di/dt = 100A/s RR F Reverse Recovery Charge 149 nC Q I = 1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Device mounted on 1 1 FR-4 PCB with high-coverage 2oz copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 June 2018 DMN2024U Diodes Incorporated www.diodes.com Document number: DS40960 Rev. 2 - 2 ADVANCED INFORMATION