Advance Technical Information TM X-Class HiPerFET V = 1000V IXFN70N100X DSS Power MOSFET I = 65A D25 R 89m D DS(on) N-Channel Enhancement Mode Avalanche Rated G S miniBLOC, SOT-227 S E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 1000 V DSS J V T = 25 C to 150 C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS S V Transient 40 V GSM D I T = 25 C 65 A D25 C I T = 25 C, Pulse Width Limited by T 150 A DM C JM G = Gate D = Drain S = Source I T = 25 C25A A C E T = 25 C 2.5 J AS C P T = 25 C 1200 W D C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J Features T -55 ... +150 C J T 150 C JM T -55 ... +150 C International Standard Package stg miniBLOC, with Aluminium Nitride V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL Isolation I 1mA t = 1 second 3000 V~ ISOL Isolation Voltage 2500V~ High Current Handling Capability M Mounting Torque 1.5/13 Nm/lb.in d Avalanche Rated Terminal Connection Torque 1.3/11.5 Nm/lb.in Low R DS(on) Weight 30 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 1000 V DSS GS D Applications V V = V , I = 8mA 3.5 6.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 50 A DSS DS DSS GS PFC Circuits T = 125C 7.5 mA J AC and DC Motor Drives R V = 10V, I = 35A, Note 1 89 m Robotics and Servo Controls DS(on) GS D 2018 IXYS CORPORATION, All Rights Reserved DS100936A(9/18)IXFN70N100X Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 35A, Note 1 34 57 S fs DS D R Gate Input Resistance 0.30 Gi C 9150 pF iss C V = 0V, V = 25V, f = 1MHz 2650 pF oss GS DS C 72 pF rss Effective Output Capacitance C 390 pF V = 0V o(er) Energy related GS V = 0.8 V C 1500 pF DS DSS o(tr) Time related t 48 ns d(on) Resistive Switching Times (M4 screws (4x) supplied) t 20 ns r V = 10V, V = 0.5 V , I = 35A GS DS DSS D t 127 ns d(off) R = 1 (External) G t 9 ns f Q 350 nC g(on) Q V = 10V, V = 0.5 V , I = 35A 84 nC gs GS DS DSS D Q 190 nC gd R 0.104C/W thJC R 0.05C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 70 A S GS I Repetitive, Pulse Width Limited by T 280 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 310 ns rr I = 35A, -di/dt = 100A/ s F Q 3.5 C RM V = 100V, V = 0V R GS I 22.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537