Preliminary Technical Information TM X-Class HiPerFET V = 1000V IXFK52N100X DSS Power MOSFET I = 52A IXFX52N100X D25 R 125m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G D V T = 25 C to 150 C 1000 V Tab DSS J S V T = 25 C to 150 C, R = 1M 1000 V DGR J GS PLUS247 V Continuous 30 V GSS (IXFX) V Transient 40 V GSM I T = 25 C 52 A D25 C I T = 25 C, Pulse Width Limited by T 100 A DM C JM I T = 25 C10A G A C D Tab E T = 25 C3J S AS C P T = 25 C 1250 W D C dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J G = Gate D = Drain S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C International Standard Packages SOLD Low Q G M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low Package Inductance Weight TO-264 10 g PLUS247 6 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 1000 V DSS GS D Switch-Mode and Resonant-Mode V V = V , I = 4mA 3.5 6.0 V Power Supplies GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA PFC Circuits GSS GS DS AC and DC Motor Drives I V = V , V = 0V 50 A DSS DS DSS GS Robotics and Servo Controls T = 125C 5 mA J R V = 10V, I = 0.5 I , Note 1 125 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100907B(10/18)IXFK52N100X IXFX52N100X Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max A E J Q S g V = 20V, I = 0.5 I , Note 1 23 37 S fs DS D D25 R Q1 D R Gate Input Resistance 0.5 Gi R1 1 2 3 L1 C 6725 pF iss C V = 0V, V = 25V, f = 1MHz 1620 pF oss GS DS L C 123 pF c rss b b1 A1 b2 Effective Output Capacitance x2 e C 220 pF V = 0V o(er) Energy related GS 0P 4 C 1070 pV = 0.8 V F o(tr) DS DSS Terminals: 1 = Gate Time related BACK SIDE 2,4 = Drain 3 = Source t 34 ns d(on) Resistive Switching Times t 13 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 107 ns d(off) R = 1 (External) G t 9 ns f Q 245 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 53 nC gs GS DS DSS D D25 Q 125 nC gd R 0.10C/W thJC R 0.15C/W thCS Source-Drain Diode TM PLUS247 Outline A Symbol Test Conditions Characteristic Values E E1 A2 Q (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J D2 R I V = 0V 52 A D1 S GS D I Repetitive, Pulse Width Limited by T 208 A 4 SM JM 1 2 3 L1 V I = I , V = 0V, Note 1 1.4 V SD F S GS t 260 ns L rr I = 26A, -di/dt = 100A/ s F Q 2.7 C RM V = 100V, V = 0V R GS b A1 e I 20.8 A 3 PLCS RM C 2 PLCS b2 2 PLCS b4 Terminals: 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537