X-On Electronics has gained recognition as a prominent supplier of IXFX52N100X MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFX52N100X MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFX52N100X IXYS

IXFX52N100X electronic component of IXYS
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See Product Specifications
Part No.IXFX52N100X
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 1000V 52A PLUS247 Power MOSFET
Datasheet: IXFX52N100X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 32.01 ea
Line Total: USD 32.01 
Availability - 197
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
197
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 32.01
10 : USD 27.665
30 : USD 26.862
60 : USD 26.345
120 : USD 25.85
270 : USD 24.563

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXFX52N100X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFX52N100X and other electronic components in the MOSFETs category and beyond.

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Preliminary Technical Information TM X-Class HiPerFET V = 1000V IXFK52N100X DSS Power MOSFET I = 52A IXFX52N100X D25 R 125m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G D V T = 25 C to 150 C 1000 V Tab DSS J S V T = 25 C to 150 C, R = 1M 1000 V DGR J GS PLUS247 V Continuous 30 V GSS (IXFX) V Transient 40 V GSM I T = 25 C 52 A D25 C I T = 25 C, Pulse Width Limited by T 100 A DM C JM I T = 25 C10A G A C D Tab E T = 25 C3J S AS C P T = 25 C 1250 W D C dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J G = Gate D = Drain S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C International Standard Packages SOLD Low Q G M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low Package Inductance Weight TO-264 10 g PLUS247 6 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 1000 V DSS GS D Switch-Mode and Resonant-Mode V V = V , I = 4mA 3.5 6.0 V Power Supplies GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA PFC Circuits GSS GS DS AC and DC Motor Drives I V = V , V = 0V 50 A DSS DS DSS GS Robotics and Servo Controls T = 125C 5 mA J R V = 10V, I = 0.5 I , Note 1 125 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100907B(10/18)IXFK52N100X IXFX52N100X Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max A E J Q S g V = 20V, I = 0.5 I , Note 1 23 37 S fs DS D D25 R Q1 D R Gate Input Resistance 0.5 Gi R1 1 2 3 L1 C 6725 pF iss C V = 0V, V = 25V, f = 1MHz 1620 pF oss GS DS L C 123 pF c rss b b1 A1 b2 Effective Output Capacitance x2 e C 220 pF V = 0V o(er) Energy related GS 0P 4 C 1070 pV = 0.8 V F o(tr) DS DSS Terminals: 1 = Gate Time related BACK SIDE 2,4 = Drain 3 = Source t 34 ns d(on) Resistive Switching Times t 13 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 107 ns d(off) R = 1 (External) G t 9 ns f Q 245 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 53 nC gs GS DS DSS D D25 Q 125 nC gd R 0.10C/W thJC R 0.15C/W thCS Source-Drain Diode TM PLUS247 Outline A Symbol Test Conditions Characteristic Values E E1 A2 Q (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J D2 R I V = 0V 52 A D1 S GS D I Repetitive, Pulse Width Limited by T 208 A 4 SM JM 1 2 3 L1 V I = I , V = 0V, Note 1 1.4 V SD F S GS t 260 ns L rr I = 26A, -di/dt = 100A/ s F Q 2.7 C RM V = 100V, V = 0V R GS b A1 e I 20.8 A 3 PLCS RM C 2 PLCS b2 2 PLCS b4 Terminals: 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
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IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
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IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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