X4-Class V = 150V IXTP130N15X4 DSS TM Power MOSFET I = 130A IXTH130N15X4 D25 R 8.5m DS(on) D N-Channel Enhancement Mode G Avalanche Rated TO-220 (IXTP) S G Symbol Test Conditions Maximum Ratings D S D (Tab) V T = 25 C to 150 C 150 V DSS J V T = 25 C to 150 C, R = 1M 150 V DGR J GS TO-247 V Continuous 20 V (IXTH) GSS V Transient 30 V GSM I T = 25 C 130 A D25 C G I T = 25 C, Pulse Width Limited by T 240 A DM C JM D D (Tab) S I T = 25 C65A A C G = Gate D = Drain E T = 25 C 800 mJ AS C S = Source Tab = Drain dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 400 W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C International Standard Packages L T 1.6 mm (0.062in.) from Case for 10s 260 C Low R and Q SOLD DS(ON) G Avalanche Rated M Mounting Torque 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-220 3 g TO-247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 150 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 20V, V = 0V 100 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 5 A DSS DS DSS GS PFC Circuits T = 125C 200 A J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 7.0 8.5 m DS(on) GS D D25 2019 IXYS CORPORATION, All Rights Reserved DS100893B(11/19) IXTP130N15X4 IXTH130N15X4 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 70 120 S fs DS D R Gate Input Resistance 3.4 Gi C 4770 pF iss C V = 0V, V = 25V, f = 1MHz 710 pF oss GS DS C 3.5 pF rss Effective Output Capacitance C 560 pF o(er) Energy related V = 0V GS C 1850 pF V = 0.8 V o(tr) Time related DS DSS t 20 ns d(on) Resistive Switching Times t 27 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 100 ns d(off) R = 5 (External) G t 10 ns f Q 87 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 24 nC gs GS DS DSS D D25 Q 23 nC gd R 0.31 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 130 A S GS I Repetitive, pulse Width Limited by T 520 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 93 ns rr I = 65A, -di/dt = 100A/ s F Q 310 nC RM V = 75V R I 6.7 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537