Advance Technical Information X4-Class V = 150V IXTA150N15X4 DSS TM Power MOSFET I = 150A IXTA150N15X4-7 D25 R 6.9m DS(on) N-Channel Enhancement Mode TO-263 Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 150 V G = Gate D = Drain DSS J S = Source Tab = Drain V T = 25 C to 175 C, R = 1M 150 V DGR J GS V Continuous 20 V GSS TO-263 (7-Leads) V Transient 30 V GSM I T = 25 C 150 A D25 C 1 I External Lead Current Limit 120 A L(RMS) I T = 25 C, Pulse Width Limited by T 260 A DM C JM 7 I T = 25 C75A D (Tab) A C E T = 25 C1J AS C Pins: 1 - Gate 2, 3, 5 , 6 , 7 - Source dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J 4 (Tab) - Drain P T = 25 C 480 W D C T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C Low R and Q SOLD DS(ON) G Avalanche Rated F Mounting Force 10..65 / 2.2..14.6 N/lb C Low Package Inductance Weight TO-263 2.5 g TO-263 (7Leads) 3.0 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 150 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 20V, V = 0V 100 nA GSS GS DS Power Supplies DC-DC Converters I V = V , V = 0V 10 A DSS DS DSS GS PFC Circuits T = 150C 500 A J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 6.9 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved. DS100909A(6/18) IXTA150N15X4 IXTA150N15X4-7 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 70 120 S fs DS D R Gate Input Resistance 1.3 Gi C 5500 pF iss C V = 0V, V = 25V, f = 1MHz 900 pF oss GS DS C 4 pF rss Effective Output Capacitance C 660 pF o(er) V = 0V Energy related GS C 2100 pF V = 0.8 V o(tr) DS DSS Time related t 23 ns d(on) Resistive Switching Times t 5 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 2 (External) G t 6 ns f Q 105 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Q 28 nC gd R 0.31 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 150 A S GS I Repetitive, pulse Width Limited by T 600 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 100 ns rr I = 75A, -di/dt = 100A/ s F Q 350 nC RM V = 75V R I 7 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537