NVMFS6B14NL Power MOSFET 100 V, 13 m , 55 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G NVMFS6B14NLWF Wettable Flank Option for Enhanced Optical Inspection V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable 13 m 10 V These Devices are PbFree and are RoHS Compliant 100 V 55 A 19 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (5,6) DraintoSource Voltage V 100 V DSS GatetoSource Voltage V 16 V GS Continuous Drain Cur- T = 25C I 55 A C D rent R (Notes 1, 3) JC T = 100C 39 C Steady G (4) State Power Dissipation R T = 25C P 94 W JC C D (Note 1) T = 100C 47 C S (1,2,3) Continuous Drain Cur- T = 25C I 11 A A D NCHANNEL MOSFET rent R (Notes 1, 2, 3) JA T = 100C 8.0 A Steady State Power Dissipation R T = 25C P 3.8 W JA A D (Notes 1 & 2) MARKING T = 100C 1.9 A DIAGRAM Pulsed Drain Current T = 25C, t = 10 s I 140 A A p DM D 1 Operating Junction and Storage Temperature T , T 55 to C J stg S D + 175 DFN5 S XXXXXX (SO8FL) AYWZZ S Source Current (Body Diode) I 60 A S CASE 488AA G D Single Pulse DraintoSource Avalanche E 811 mJ AS STYLE 1 D Energy (I = 2.0 A) L(pk) XXXXXX = 6B14NL Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) (NVMFS6B14NL) or 6B14LW Stresses exceeding those listed in the Maximum Ratings table may damage the (NVMFS6B14NLWF) device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y = Year THERMAL RESISTANCE MAXIMUM RATINGS W = Work Week ZZ = Lot Traceability Parameter Symbol Value Unit JunctiontoCase Steady State R 1.6 C/W JC JunctiontoAmbient Steady State (Note 2) R 40 ORDERING INFORMATION JA See detailed ordering, marking and shipping information on 1. The entire application environment impacts the thermal resistance values shown, page 5 of this data sheet. they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2017 Rev. 3 NVMFS6B14NL/DNVMFS6B14NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 80 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 25 DSS GS J V = 80 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 16 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.8 mV/C GS(TH) J V = 10 V 10.5 13 GS DraintoSource On Resistance R I = 20 A m DS(on) D V = 4.5 V 15.5 19 GS CHARGES AND CAPACITANCES Input Capacitance C 1680 ISS Output Capacitance C 580 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 42 RSS V = 4.5 V, V = 50 V I = 25 A 8 GS DS D Total Gate Charge Q G(TOT) 17 Threshold Gate Charge Q 2.2 nC G(TH) GatetoSource Charge Q 4.1 V = 10 V, V = 50 V I = 25 A GS GS DS D GatetoDrain Charge Q 2.0 GD Plateau Voltage V 3.3 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 11 d(ON) Rise Time t 67.6 r V = 4.5 V, V = 50 V, GS DS ns I = 25 A, R = 1.0 D G TurnOff Delay Time t 14.8 d(OFF) Fall Time t 7.2 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.83 1.2 SD J V = 0 V, GS V I = 20 A S T = 125C 0.72 J Reverse Recovery Time t 48 RR Charge Time t 25 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 25 A Discharge Time t S 23 b Reverse Recovery Charge Q 53 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2