BSZ024N04LS6ATMA1 Infineon

BSZ024N04LS6 MOSFET TM PG-TSDSON-8 FL OptiMOS 6 Power-Transistor , 40 V 8 5 Features 7 6 6 7 5 8 Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance 1 4 2 3 3 N-channel 2 4 1 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 175 C rated Drain Pin 5-8 Table 1 Key Performance Parameters Parameter Value Unit *1 Gate Pin 4 V 40 V DS Source R 2.4 m DS(on),max Pin 1-3 *1: Internal body diode I 130 A D Q oss 28 nC Q G(0V..10V) 25 nC Q (0V..4.5V) 12.3 nC G Type / Ordering Code Package Marking Related Links BSZ024N04LS6 PG-TSDSON-8 FL 24N04L6 - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.2, 2021-02-22TM OptiMOS 6 Power-Transistor , 40 V BSZ024N04LS6 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.2, 2021-02-22