DMN30H4D1S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate-Threshold Voltage I Max D BV R Max DSS DS(ON) Low-Input Capacitance T = +25C A 0.43A 4.0 V = 10V Fast-Switching Speed GS 300V 5.0 V = 4.5V 0.39A GS Small Surface-Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description Case: SOT23 Case Material: Molded Plastic UL Flammability Classification This new generation MOSFET is designed to minimize the on-state resistance (R ) yet maintain superior switching performance, Rating 94V-0 DS(ON) Moisture Sensitivity: Level 3 per J-STD-020 which makes the device ideal for high-efficiency power- Terminals: Solderable per MIL-STD-202, Method 208 management applications. Lead-Free PlatingMatte Tin Finish Annealed over Alloy 42 Leadframe e3 Applications Terminal ConnectionsSee Diagram DC-DC Converters Weight: 0.008 grams (Approximate) Power-Management Functions Battery-Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, and so on D SOT23 G S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN30H4D1S-7 SOT23 3,000/Tape & Reel DMN30H4D1S-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN30H4D1S Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 300 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 0.43 A Steady State A Continuous Drain Current (Note 6) V = 10V I GS D 0.34 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle 1%) I 2 A DM Maximum Body Diode Continuous Current (Note 6) 1.3 A I S Pulsed Source Current (10s Pulse, Duty Cycle 1%) 2 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.36 W P D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 162 C/W JA Total Power Dissipation (Note 6) P 0.43 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 111 C/W JA Thermal Resistance, Junction to Case (Note 6) R 31 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 300 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 240V, V = 0V DSS DS GS Gate-Body Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 2.29 4.0 V = 10V, I = 0.3A GS D Static Drain-Source On-Resistance R DS(ON) 2.34 5.0 V = 4.5V, I = 0.2A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 0.3A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 174 Input Capacitance C iss V = 25V, V = 0V, DS GS 12 Output Capacitance C pF oss f = 1.0MHz 7 Reverse Transfer Capacitance C rss Gate Resistance 2.96 Rg VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge 4.8 Q g V = 192V, V = 10V, DS GS Gate-Source Charge 0.6 nC Q gs I = 0.5A D Gate-Drain Charge 2.1 Q gd Turn-On Delay Time t 6.1 D(ON) Turn-On Rise Time t 3.5 R V = 60V, R =200 DS L ns Turn-Off Delay Time t 20.6 V = 10V, R = 25 D(OFF) GS G Turn-Off Fall Time t 13.8 F Reverse Recovery Time t 43 ns RR IF=0.5A, di/dt=100A/s Reverse Recovery Charge Q 51 nC RR Notes: 5. Device mounted on FR-4 PC board with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper with 1-inch square copper pad layout. 7 .Short-duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMN30H4D1S October 2018 Diodes Incorporated www.diodes.com Document number: DS40951 Rev. 4 - 2 ADVANCED INFORMATION NEW PRODUCT