PD - 95953A IRFR2607ZPbF IRFU2607ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature V = 75V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 22m DS(on) Lead-Free G Description I = 42A D S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of D-Pak I-Pak applications. IRFU2607ZPbF IRFR2607ZPbF Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C GS 45 D C I T = 100C Continuous Drain Current, V 10V GS 32 A D C Continuous Drain Current, V 10V (Package Limited) I T = 25C 42 GS D C Pulsed Drain Current I 180 DM P T = 25C Power Dissipation 110 W D C Linear Derating Factor 0.72 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E 96 mJ AS (Thermally limited) Single Pulse Avalanche Energy Tested Value E (Tested ) 96 AS Avalanche Current I See Fig.12a, 12b, 15, 16 A AR Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.38 JC Junction-to-Ambient (PCB mount) R 40 C/W JA Junction-to-Ambient R 110 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.074 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 17.6 22 m V = 10V, I = 30A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 50A GS(th) DS GS D gfs Forward Transconductance 36 S V = 25V, I = 30A DS D I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 75V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 nA V = 20V I GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 34 51 I = 30A g D Q Gate-to-Source Charge 8.9 nC V = 60V gs DS Q Gate-to-Drain Mille) Charge 14 V = 10V gd GS t Turn-On Delay Time 14 V = 38V d(on) DD t Rise Time 59 I = 30A r D t Turn-Off Delay Time 39 ns R = 15 d(off) G t Fall Time 28 V = 10V f GS L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) L Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 1440 V = 0V iss GS C Output Capacitance 190 V = 25V oss DS C Reverse Transfer Capacitance 110 pF = 1.0MHz rss C Output Capacitance 720 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 130 V = 0V, V = 60V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 230 V = 0V, V = 0V to 60V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 45 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 180 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 30A, V = 0V SD J S GS t Reverse Recovery Time 30 45 ns T = 25C, I = 30A, V = 38V rr J F DD Q Reverse Recovery Charge 28 42 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com