X-On Electronics has gained recognition as a prominent supplier of IRFR2607ZPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR2607ZPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR2607ZPBF Infineon

IRFR2607ZPBF electronic component of Infineon
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Part No.IRFR2607ZPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Datasheet: IRFR2607ZPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 10
Multiples : 10
10 : USD 1.7836
100 : USD 1.5827
500 : USD 1.3817
N/A

Obsolete
0

Multiples : 3000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 5.4976
10 : USD 1.9503
100 : USD 1.7016
500 : USD 1.5577
1000 : USD 1.3875
3000 : USD 1.3875
9000 : USD 1.2958
24000 : USD 1.2762
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.2295
2 : USD 1.5139
21 : USD 1.4226
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFR2607ZPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR2607ZPBF and other electronic components in the MOSFETs category and beyond.

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PD - 95953A IRFR2607ZPbF IRFU2607ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature V = 75V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 22m DS(on) Lead-Free G Description I = 42A D S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of D-Pak I-Pak applications. IRFU2607ZPbF IRFR2607ZPbF Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C GS 45 D C I T = 100C Continuous Drain Current, V 10V GS 32 A D C Continuous Drain Current, V 10V (Package Limited) I T = 25C 42 GS D C Pulsed Drain Current I 180 DM P T = 25C Power Dissipation 110 W D C Linear Derating Factor 0.72 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E 96 mJ AS (Thermally limited) Single Pulse Avalanche Energy Tested Value E (Tested ) 96 AS Avalanche Current I See Fig.12a, 12b, 15, 16 A AR Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.38 JC Junction-to-Ambient (PCB mount) R 40 C/W JA Junction-to-Ambient R 110 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.074 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 17.6 22 m V = 10V, I = 30A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 50A GS(th) DS GS D gfs Forward Transconductance 36 S V = 25V, I = 30A DS D I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 75V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 nA V = 20V I GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 34 51 I = 30A g D Q Gate-to-Source Charge 8.9 nC V = 60V gs DS Q Gate-to-Drain Mille) Charge 14 V = 10V gd GS t Turn-On Delay Time 14 V = 38V d(on) DD t Rise Time 59 I = 30A r D t Turn-Off Delay Time 39 ns R = 15 d(off) G t Fall Time 28 V = 10V f GS L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) L Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 1440 V = 0V iss GS C Output Capacitance 190 V = 25V oss DS C Reverse Transfer Capacitance 110 pF = 1.0MHz rss C Output Capacitance 720 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 130 V = 0V, V = 60V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 230 V = 0V, V = 0V to 60V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 45 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 180 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 30A, V = 0V SD J S GS t Reverse Recovery Time 30 45 ns T = 25C, I = 30A, V = 38V rr J F DD Q Reverse Recovery Charge 28 42 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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