PD - 93861
IRFR2405
IRFU2405
HEXFET Power MOSFET
l Surface Mount (IRFR2405)
l Straight Lead (IRFU2405)
D
l Advanced Process Technology
V = 55V
DSS
l Dynamic dv/dt Rating
l Fast Switching
R = 0.016
DS(on)
G
l Fully Avalanche Rated
Description
I = 56A
D
Seventh Generation HEXFET Power MOSFETs from
S
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
D-Pak I-Pak
hole mounting applications. Power dissipation levels
IRFR2405 IRFU2405
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V 56
D C GS
I @ T = 100C Continuous Drain Current, V @ 10V 40 A
D C GS
I Pulsed Drain Current 220
DM
P @T = 25C Power Dissipation 110 W
D C
Linear Derating Factor 0.71 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 130 mJ
AS
I Avalanche Current 34 A
AR
E Repetitive Avalanche Energy 11 mJ
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T Operating Junction and -55 to + 175
J
T Storage Temperature Range
STG C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 1.4
JC
R Junction-to-Ambient (PCB mount)* 50 C/W
JA
R Junction-to-Ambient 110
JA
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com 1
3/1/00IRFR/U2405
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, I = 1mA
(BR)DSS J D
R Static Drain-to-Source On-Resistance 0.0118 0.016 V = 10V, I = 34A
DS(on) GS D
V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250A
GS(th) DS D
g Forward Transconductance 30 S V = 25V, I = 34A
fs DS D
20 V = 55V, V = 0V
DS GS
I Drain-to-Source Leakage Current A
DSS
250 V = 44V, V = 0V, T = 150C
DS GS J
Gate-to-Source Forward Leakage 200 V = 20V
GS
I nA
GSS
Gate-to-Source Reverse Leakage -200 V = -20V
GS
Q Total Gate Charge 70 110 I = 34A
g D
Q Gate-to-Source Charge 16 23 nC V = 44V
gs DS
Q Gate-to-Drain Mille) Charge 19 29 V = 10V
gd GS
t Turn-On Delay Time 15 V = 28V
d(on) DD
t Rise Time 130 I = 34A
r D
ns
t Turn-Off Delay Time 55 R = 6.8
d(off) G
t Fall Time 78 V = 10V
f GS
D
Between lead,
L Internal Drain Inductance 4.5
D
6mm (0.25in.)
nH
G
from package
L Internal Source Inductance 7.5
S
and center of die contact
S
C Input Capacitance 2430 V = 0V
iss GS
C Output Capacitance 470 pF V = 25V
oss DS
C Reverse Transfer Capacitance 100 = 1.0MHz, See Fig. 5
rss
C Output Capacitance 2040 V = 0V, V = 1.0V, = 1.0MHz
oss GS DS
C Output Capacitance 350 V = 0V, V = 44V, = 1.0MHz
oss GS DS
C eff. Effective Output Capacitance 350 V = 0V, V = 0V to 44V
oss GS DS
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
56
(Body Diode) showing the
A
G
I Pulsed Source Current integral reverse
SM
220
S
(Body Diode) p-n junction diode.
V Diode Forward Voltage 1.3 V T = 25C, I = 34A, V = 0V
SD J S GS
t Reverse Recovery Time 62 93 ns T = 25C, I = 34A
rr J F
Q Reverse RecoveryCharge 170 260 nC di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on
S D
Notes:
Repetitive rating; pulse width limited by
Pulse width 300s; duty cycle 2%.
max. junction temperature.
C eff. is a fixed capacitance that gives the same charging time
oss
Starting T = 25C, L = 0.22mH
J
as C while V is rising from 0 to 80% V
oss DS DSS
R = 25, I = 34A.
G AS
Calculated continuous current based on maximum allowable
I 34A, di/dt 190A/s, V V ,
SD DD (BR)DSS
junction temperature. Package limitation current is 30A
T 175C
J
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