X-On Electronics has gained recognition as a prominent supplier of IRFR110TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR110TRPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR110TRPBF Vishay

Hot IRFR110TRPBF electronic component of Vishay
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See Product Specifications
Part No.IRFR110TRPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 100 V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
Datasheet: IRFR110TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.3835 ea
Line Total: USD 767 
Availability - 1940
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
1940
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.3835
4000 : USD 0.3835
6000 : USD 0.3835
8000 : USD 0.3835
10000 : USD 0.3835

550
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6895
10 : USD 0.5708
30 : USD 0.5132
100 : USD 0.454
500 : USD 0.4194
1000 : USD 0.4022

3712
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0695
10 : USD 0.7901
100 : USD 0.5635
500 : USD 0.4899
1000 : USD 0.4818

1940
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.5348
4000 : USD 0.4498
6000 : USD 0.4455

1685
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 40
Multiples : 1
40 : USD 1.0417
50 : USD 0.9067
100 : USD 0.8157
200 : USD 0.78
500 : USD 0.6907
1000 : USD 0.5622

1503
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 19
Multiples : 1
19 : USD 0.6661
25 : USD 0.6626
100 : USD 0.5603
250 : USD 0.5583
500 : USD 0.5279
1000 : USD 0.4975

1940
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.4926
4000 : USD 0.4143
6000 : USD 0.4103

   
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We are delighted to provide the IRFR110TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR110TRPBF and other electronic components in the MOSFETs category and beyond.

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IRFR110, SiHFR110 www.vishay.com Vishay Siliconix Power MOSFET D FEATURES Dynamic dV/dt rating DPAK (TO-252) Repetitive avalanche rated Surface-mount (IRFR110, SiHFR110) D Available in tape and reel G Fast switching Available Ease of paralleling S Material categorization: for definitions of compliance S G please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provide the V (V) 100 designer with the best combination of fast switching, DS ruggedized device design, low on-resistance and R ()V = 10 V 0.54 DS(on) GS cost-effectiveness. Q max. (nC) 8.3 g The DPAK is designed for surface mounting using vapor Q (nC) 2.3 gs phase, infrared, or wave soldering techniques. Power Q (nC) 3.8 gd dissipation levels up to 1.5 W are possible in typical surface Configuration Single mount applications. ORDERING INFORMATION PACKAGE DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR110-GE3 SiHFR110TRL-GE3 SiHFR110TR-GE3 SiHFR110TRR-GE3 a a Lead (Pb)-free IRFR110PbF IRFR110TRLPbF IRFR110TRPbF - ab ab ab Lead (Pb)-free and halogen-free IRFR110PbF-BE3 IRFR110TRLPbF-BE3 IRFR110TRPbF-BE3 Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 20 GS T = 25 C 4.3 C Continuous drain current V at 10 V I GS D T = 100 C 2.7 A C a Pulsed drain current I 17 DM Linear derating factor 0.20 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 75 mJ AS a Repetitive avalanche current I 4.3 A AR a Repetitive avalanche energy E 2.5 mJ AR Maximum power dissipation T = 25 C 25 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 8.1 mH, R = 25 , I = 4.3 A (see fig. 12) DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0466-Rev. G, 17-May-2021 Document Number: 91265 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR110, SiHFR110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R - 110 thJA a Maximum junction-to-ambient (PCB mount) R -50 C/W thJA Maximum junction-to-case (drain) R -5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 2.6 A -- 0.54 DS(on) GS D Forward transconductance g V = 50 V, I = 2.6 A 1.6 - - S fs DS D Dynamic Input capacitance C -180 - iss V = 0 V, GS Output capacitance C -8V = 25 V, 0- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -15- rss Total gate charge Q -- 8.3 g I = 5.6 A, V = 80 V, D DS Gate-source charge Q --V = 10 V 2.3 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --3.8 gd Turn-on delay time t -6.9 - d(on) Rise time t -16 - r V = 50 V, I = 5.6 A, DD D ns b R = 24 , R = 8.4 , see fig. 10 Turn-off delay time t -1g D 5- d(off) Fall time t -9.4- f Internal drain inductance R f = 1 MHz, open drain 2.5 - 11.6 g D Internal source inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH package and center of G Input capacitance L -7.5 - S die contact S Drain-source body diode characteristics MOSFET symbol Continuous source-drain diode current I -- 4.3 D S showing the A integral reverse G a Pulsed diode forward current I -- 17 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 4.3 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 100 200 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.44 0.88 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0466-Rev. G, 17-May-2021 Document Number: 91265 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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