PD - 95703 IRFPS3810PbF HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 100V DSS Dynamic dv/dt Rating 175C Operating Temperature R = 0.009 DS(on) Fast Switching G Fully Avalanche Rated I = 170A D Lead-Free S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Super-247 Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 170 D C GS I T = 100C Continuous Drain Current, V 10V 120 A D C GS I Pulsed Drain Current 670 DM P T = 25C Power Dissipation 580 W D C Linear Derating Factor 3.8 W/C V Gate-to-Source Voltage 30 V GS E Single Pulse Avalanche Energy 1350 mJ AS I Avalanche Current 100 A AR E Repetitive Avalanche Energy 58 mJ AR dv/dt Peak Diode Recovery dv/dt 2.3 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.26 JC R Case-to-Sink, Flat, Greased Surface 0.24 C/W CS R Junction-to-Ambient 40 JA www.irf.com 1 9/10/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.009 V = 10V, I = 100A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 52 S V = 50V, I = 100A fs DS D 25 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Q Total Gate Charge 260 390 I = 100A g D Q Gate-to-Source Charge 49 74 nC V = 80V gs DS Q Gate-to-Drain Mille) Charge 160 250 V = 10V gd GS t Turn-On Delay Time 24 V = 50V d(on) DD t Rise Time 270 I = 100A r D ns t Turn-Off Delay Time 45 R = 1.03 d(off) G t Fall Time 140 V = 10V f GS D Between lead, L Internal Drain Inductance 5.0 D 6mm (0.25in.) nH G from package L Internal Source Inductance 13 S and center of die contact S C Input Capacitance 6790 V = 0V iss GS C Output Capacitance 2470 pF V = 25V oss DS C Reverse Transfer Capacitance 990 = 1.0MHz, See Fig. 5 rss C Output Capacitance 10740 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 1180 V = 0V, V = 80V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 2210 V = 0V, V = 0V to 80V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 170 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 670 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 100A, V = 0V SD J S GS t Reverse Recovery Time 220 330 ns T = 25C, I = 100A rr J F Q Reverse RecoveryCharge 1640 2460 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by Pulse width 400s duty cycle 2%. max. junction temperature. (See fig. 11) C eff. is a fixed capacitance that gives the same charging time oss Starting T = 25C, L = 0.27mH J as C while V is rising from 0 to 80% V oss DS DSS R = 25, I = 100A. (See Figure 12) G AS Calculated continuous current based on maximum allowable I 100A, di/dt 350A/s, V V , SD DD (BR)DSS junction temperature. Package limitation current is 105A. T 175C J 2 www.irf.com