IRFP4242PbF Features Key Parameters Advanced process technology V min 300 V Key parameters optimized for PDP Sustain & DS Energy Recovery applications V typ. 360 V DS (Avalanche) Low E rating to reduce the power PULSE R typ. 10V 49 m DS(ON) dissipation in Sustain & ER applications I max T = 100C 93 A RP C Low Q for fast response G T max High repetitive peak current capability for 175 C J reliable operation D D Short fall & rise times for fast switching 175C operating junction temperature for improved ruggedness S Repetitive avalanche capability for robustness D G G and reliability S TO-247AC GD S G ate Drain Source Description HEXFET Power MOSFET MOSFET MOSFET %& ( ) * * ) MOSFET + * * Absolute Maximum Ratings Parameter Max. Units V 30 Gate-to-Source Voltage V GS I T = 25C Continuous Drain Current, V 10V 46 A D C GS I T = 100C Continuous Drain Current, V 10V 33 D C GS I Pulsed Drain Current 190 DM I T = 100C Repetitive Peak Current 93 RP C P T = 25C Power Dissipation 430 W D C P T = 100C Power Dissipation 210 D C 2.9 Linear Derating Factor W/C T -40 to + 175 Operating Junction and C J T Storage Temperature Range STG 300 Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 10lb in (1.1N m) N Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.35 C/W JC Notes through are on page 8 www.irf.com 1 09/14/07 Electrical Characteristics T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 300 V DSS GS D V / T Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient 220 mV/C DSS J D V = 10V, I = 33A R Static Drain-to-Source On-Resistance 49 59 m GS D DS(on) V V = V , I = 250A Gate Threshold Voltage 3.0 5.0 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -15 mV/C GS(th) J I V = 240V, V = 0V Drain-to-Source Leakage Current 5.0 A DSS DS GS V = 240V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 25V, I = 33A g Forward Transconductance 78 S DS D fs Q V = 150V, I = 33A, V = 10V Total Gate Charge 165 247 nC g DD D GS Q Gate-to-Drain Charge 61 gd t V = 150V, V = 10V Turn-On Delay Time 40 d(on) DD GS I = 33A t Rise Time 71 ns D r t R = 5.0 Turn-Off Delay Time 72 d(off) G t See Fig. 22 Fall Time 48 f t Shoot Through Blocking Time 100 ns V = 240V, V = 15V, R = 5.1 st DD GS G L = 220nH, C= 0.4F, V = 15V GS 1960 E Energy per Pulse J V = 240V, R = 4.7, T = 25C PULSE DS G J L = 220nH, C= 0.4F, V = 15V GS 3740 V = 240V, R = 4.7, T = 100C DS G J C V = 0V Input Capacitance 7370 iss GS V = 25V C Output Capacitance 520 pF DS oss C Reverse Transfer Capacitance 220 = 1.0MHz, See Fig.9 rss C eff. V = 0V, V = 0V to 240V Effective Output Capacitance 320 GS DS oss L Internal Drain Inductance 5.0 Between lead, D D nH 6mm (0.25in.) G L Internal Source Inductance 13 from package S S and center of die contact Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 700 mJ AS E 43 mJ Repetitive Avalanche Energy AR V Repetitive Avalanche Voltage 360 V DS(Avalanche) I 33 Avalanche Current A AS Diode Characteristics Conditions Parameter Min. Typ. Max. Units I T = 25C Continuous Source Current 46 MOSFET symbol S C showing the (Body Diode) A I Pulsed Source Current 190 integral reverse SM p-n junction diode. (Body Diode) T = 25C, I = 33A, V = 0V V Diode Forward Voltage 1.0 V J S GS SD t T = 25C, I = 33A, V = 50V Reverse Recovery Time 300 450 ns rr J F DD Q Reverse Recovery Charge 2330 3500 nC di/dt = 100A/s rr 2 www.irf.com