DMG1013UWQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Features Mechanical Data
Low On-Resistance Case: SOT323
Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Low Input Capacitance
Moisture Sensitivity: Level 1 per J-STD-020
Fast Switching Speed
Terminal Connections: See Diagram Below
Low Input/Output Leakage
Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe.
ESD Protected
Solderable per MIL-STD-202, Method 208 e3
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Weight: 0.006 grams (Approximate)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Drain
D
Gate
Gate
G S
Protection
Source
Diode
ESD PROTECTED
Top View
Equivalent Circuit Top View
Ordering Information (Note 5)
Part Number Case Packaging
DMG1013UWQ-7 SOT323 3000 / Tape & Reel
DMG1013UWQ-13 SOT323 10000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMG1013UWQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage -20 V
VDSS
Gate-Source Voltage V 6 V
GSS
Steady T = +25C -0.82
A
Continuous Drain Current (Note 6) A
I
D
State -0.54
T = +85C
A
Pulsed Drain Current (Note 7) -3 A
I
DM
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6) P 0.31 W
D
Thermal Resistance, Junction to Ambient @T = +25C (Note 6) R 398 C/W
A JA
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage -20 - - V
BV V = 0V, I = -250A
DSS GS D
- - -100 nA
Zero Gate Voltage Drain Current T = +25C I V = -20V, V = 0V
J DSS DS GS
Gate-Source Leakage - - 2.0 A
I V = 4.5V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage -0.5 - -1.0 V
V V = V , I = -250A
GS(TH) DS GS D
V = -4.5V, I = -430mA
0.5 0.75 GS D
Static Drain-Source On-Resistance R - 0.7 1.05 V = -2.5V, I = -300mA
DS(ON) GS D
1.0 1.5
V = -1.8V, I = -150mA
GS D
Forward Transfer Admittance |Y | - 0.9 - S V = -10V, I = -250mA
fs DS D
Diode Forward Voltage V -0.8 -1.2 V V = 0V, I = -150mA
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
- 59.76 -
Input Capacitance C pF
iss
V = -16V, V = 0V,
DS GS
- 12.07 -
Output Capacitance C pF
oss
f = 1.0MHz
Reverse Transfer Capacitance - 6.36 - pF
C
rss
Total Gate Charge - 622.4 - pC
Q
g
V = -4.5V, V = -10V,
GS DS
Gate-Source Charge - 100.3 - pC
Q
gs
I = -250mA
D
Gate-Drain Charge - 132.2 - pC
Q
gd
5.1
Turn-On Delay Time t - - ns
D(ON)
V = -10V, V = -4.5V,
DD GS
8.1
Turn-On Rise Time t - - ns
R
R = 47, R = 10,
L G
28.4
Turn-Off Delay Time t - - ns
D(OFF)
I = -200mA
D
20.7
Turn-Off Fall Time t - - ns
F
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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DMG1013UWQ January 2016
Diodes Incorporated
www.diodes.com
Document number: DS38559 Rev. 1 - 2