TM TM Polar3 HiPerFET V = 600V IXFA14N60P3 DSS Power MOSFET I = 14A IXFP14N60P3 D25 R 540m DS(on) IXFH14N60P3 N-Channel Enhancement Mode TO-263 (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220 (IXFP) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C, R = 1M 600 V DGR J GS V Continuous 30 V G GSS D V Transient 40 V S GSM D (Tab) I T = 25 C14A D25 C TO-247 (IXFH) I T = 25 C, Pulse Width Limited by T 35 A DM C JM I T = 25 C7A A C E T = 25 C 700 mJ AS C G dv/dt I I , V V , T 150 C 35 V/ns S DM DD DSS J D D (Tab) S P T = 25 C 330 W D C T -55 ... +150 C J G = Gate D = Drain T 150 C S = Source Tab = Drain JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Features L T Plastic Body for 10s 260 C SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb International Standard Packages C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in Fast Intrinsic Rectifier d Avalanche Rated Weight TO-263 2.5 g Low R and Q DS(ON) G TO-220 3.0 g Low Package Inductance TO-247 6.0 g Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 1mA 600 V DSS GS D Applications V V = V , I = 1mA 3.0 5.0 V GS(th) DS GS D I V = 30V, V = 0V 100 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 25 A DC-DC Converters DSS DS DSS GS T = 125C 750 A Laser Drivers J AC and DC Motor Drives R V = 10V, I = 0.5 I , Note 1 540 m DS(on) GS D D25 Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100423B(6/18) IXFA14N60P3 IXFP14N60P3 IXFH14N60P3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 9 15 S fs DS D D25 R Gate Input Resistance 2.8 Gi C 1480 pF iss C V = 0V, V = 25V, f = 1MHz 178 pF oss GS DS C 7 pF rss t 21 ns d(on) Resistive Switching Times t 15 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 43 ns d(off) R = 10 (External) G t 16 ns f Q 25 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 6.3 nC gs GS DS DSS D D25 Q 11 nC gd R 0.38 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 14 A S GS I Repetitive, Pulse Width Limited by T 56 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns I = 14A, -di/dt = 50A/ s rr F Q 0.6 C RM V = 100V R I 5.7 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537