SUM50020E www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES TO-263 TrenchFET power MOSFET Maximum 175 C junction temperature Q /Q ratio < 0.25 gd gs Operable with logic-level gate drive 100 % R and UIS tested g Material categorization: for definitions of compliance SS please see www.vishay.com/doc 99912 DD GG Top View APPLICATIONS D Power supply - Secondary synchronous rectification PRODUCT SUMMARY DC/DC converter V (V) 60 DS Power tools G R max. ( ) at V = 10 V 0.0022 DS(on) GS Motor drive switch R max. ( ) at V = 7.5 V 0.0024 DS(on) GS DC/AC inverter Q typ. (nC) 128 g d I (A) 120 Battery management D S N-Channel MOSFET Configuration Single ORDERING INFORMATION Package TO-263 Lead (Pb)-free and halogen-free SUM50020E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS d T = 25 C 120 C Continuous drain current (T = 150 C) I J D d T = 70 C 120 C A Pulsed drain current (t = 100 s) I 300 DM Avalanche current I 75 AS L = 0.1 mH a Single avalanche energy E 281 mJ AS b T = 25 C 375 C a Maximum power dissipation P W D b T = 125 C 125 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-ambient (PCB mount) R 40 thJA C/W Junction-to-case (drain) R 0.4 thJC Notes a. Duty cycle 1 % b. See SOA curve for voltage derating c. When mounted on 1 square PCB (FR4 material) d. Package limited S17-1310-Rev. B, 21-Aug-17 Document Number: 75403 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUM50020E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate threshold voltage V V = V , I = 250 A 2 - 4 GS(th) DS GS D Gate-body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 60 V, V = 0 V - - 1 DS GS A Zero gate voltage drain current I V = 60 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 60 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-state drain current I V 10 V, V = 10 V 120 - - A D(on) DS GS V = 10 V, I = 30 A - 0.0018 0.0022 GS D a Drain-source on-state resistance R DS(on) V = 7.5 V, I = 20 A - 0.0020 0.0024 GS D a Forward transconductance g V = 15 V, I = 30 A - 145 - S fs DS D b Dynamic Input capacitance C - 11 150 - iss Output capacitance C V = 0 V, V = 30 V, f = 1 MHz - 4255 - pF oss GS DS Reverse transfer capacitance C -420- rss c Total gate charge Q - 128 - g c Gate-source charge Q V = 30 V, V = 10 V, I = 20 A -44- nC gs DS GS D c Gate-drain charge Q -9- gd Gate resistance R f = 1 MHz 0.32 1.6 3.2 g c Turn-on delay time t -18 36 d(on) c Rise time t -20 40 r V = 30 V, R = 5 DD L ns I 10 A, V = 10 V, R = 1 c D GEN g Turn-off delay time t -55100 d(off) c Fall time t -23 35 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed current (t = 100 s) I -- 300 A SM a Forward voltage V I = 10 A, V = 0 V - 0.8 1.5 V SD F GS Reverse recovery time t - 120 180 ns rr Peak reverse recovery charge I I = 39 A, di/dt = 100 A/s -5.5 11 A RM(REC) F Reverse recovery charge Q - 0.320 0.480 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1310-Rev. B, 21-Aug-17 Document Number: 75403 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000