X-On Electronics has gained recognition as a prominent supplier of IRF200S234 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF200S234 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF200S234 Infineon

Name: IRF200S234
Brand: Infineon
SKU: IRF200S234_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IRF200S234 electronic component of Infineon

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See Product Specifications

Part No.	IRF200S234
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET TRENCH_MOSFETS
Datasheet:	IRF200S234 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.5238 ea
Line Total: USD 2.52

Availability - 26
Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

IRF200S234 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

26

Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ : 1
Multiples : 1

1 : USD 2.5238
10 : USD 2.2156
30 : USD 2.0242
100 : USD 1.578
500 : USD 1.488
800 : USD 1.4496

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

90 A 90 A

Vds - Drain-Source Breakdown Voltage

200 V 200 V

Rds On - Drain-Source Resistance

14 mOhms 14 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

3 V 3 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

417 W 417 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

D2PAK - 3 D2PAK - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

162 nC 162 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Transistor Type

1 N - Channel 1 N - Channel

Brand

Infineon Technologies Infineon Technologies

Forward Transconductance - Min

96 S 96 S

Fall Time

37 ns 37 ns

Product Type

Mosfet Mosfet

Rise Time

58 ns 58 ns

Factory Pack Quantity :

800 800

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

67 ns 67 ns

Typical Turn-On Delay Time

21 ns 21 ns

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Notes:- Show Stocked Products With Similar Attributes.

IRF200S234 Alternative Parts

We are delighted to provide the IRF200S234 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF200S234 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IRF200S234 is a MOSFET TRENCH_MOSFETS manufactured by the Infineon. It is a part of their OptiMOS™ family of power MOSFETs. It is a high voltage N-channel MOSFET with an integrated Schottky diode. It offers high performance levels and unrivalled resistance to avalanche processes. The MOSFET is designed to provide efficient switching of high power applications with full 100 % rated drain current and low on resistance for higher operating temperatures and current levels. It has an advanced trench cell structure that enables a higher drain current capability and lower on resistance. It is capable of operating up to 200V and can withstand up to 200V drain-to-source breakdown voltage. It is designed for applications such as synchronous rectification and DC-DC power conversion.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
26 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 1 Multiples : 1	1 : USD 2.5238 10 : USD 2.2156 30 : USD 2.0242 100 : USD 1.578 500 : USD 1.488 800 : USD 1.4496

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