SUM65N20-30 Vishay Siliconix N-Channel 200-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ()I (A) (BR)DSS DS(on) D 175 C Junction Temperature a RoHS 200 0.030 at V = 10 V 65 GS COMPLIANT Low Thermal Resistance Package 100 % R Tested g APPLICATIONS Isolated DC/DC Converters D TO-263 G G D S Top View S Ordering Information: SUM65N20-30-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage V 200 DS V V Gate-Source Voltage 20 GS a T = 25 C C 65 Continuous Drain Current (T = 175 C) I J D a T = 125 C C 37 A Pulsed Drain Current I 140 DM I Avalanche Current 35 AS L = 0.1 mH b E 61 mJ Single Pulse Avalanche Energy AS c T = 25 C C 375 b P W Maximum Power Dissipation D d T = 25 C 3.75 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit d Junction-to-Ambient R 40 PCB Mount (TO-263) thJA C/W R Junction-to-Case (Drain) 0.4 thJC Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1 square PCB (FR-4 material). Document Number: 71702 www.vishay.com S-80272-Rev. D, 11-Feb-08 1SUM65N20-30 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 200 (BR)DSS DS D V V V = V , I = 250 A Gate-Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 200 V, V = 0 V 1 DS GS I V = 200 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 200 V, V = 0 V, T = 175 C 250 DS GS J a I V 5 V, V = 10 V 120 A On-State Drain Current D(on) DS GS V = 10 V, I = 30 A 0.023 0.030 GS D a r V = 10 V, I = 30 A, T = 125 C Drain-Source On-State Resistance 0.063 DS(on) GS D J V = 10 V, I = 30 A, T = 175 C 0.084 GS D J a g V = 15 V, I = 30 A Forward Transconductance 25 S fs DS D b Dynamic Input Capacitance C 5100 iss C V = 0 V, V = 25 V, f = 1 MHz Output Capacitance 480 pF oss GS DS Reverse Transfer Capacitance C 210 rss c Q Total Gate Charge 90 130 g c Q V = 100 V, V = 10 V, I = 85 A 23 nC Gate-Source Charge gs DS GS D c Q Gate-Drain Charge 34 gd Gate Resistance R 0.5 1.7 3.3 g c t Turn-On Delay Time 24 35 d(on) c t V = 100 V, R = 1.5 220 330 Rise Time r DD L ns c I 65 A, V = 10 V, R = 2.5 t Turn-Off Delay Time D GEN g 45 70 d(off) c t 200 300 Fall Time f b Source-Drain Diode Ratings and Characteristics T = 25 C C I Continuous Current 65 S A I Pulsed Current 140 SM a V I = 65 A, V = 0 V 1.0 1.5 V Forward Voltage SD F GS t Reverse Recovery Time 130 200 ns rr I I = 50 A, di/dt = 100 A/s Peak Reverse Recovery Current 812 A RM(REC) F Reverse Recovery Charge Q 0.52 1.2 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71702 2 S-80272-Rev. D, 11-Feb-08