X-On Electronics has gained recognition as a prominent supplier of SUM70060E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUM70060E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUM70060E-GE3 Vishay

SUM70060E-GE3 electronic component of Vishay
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Part No.SUM70060E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: mosfet n trench 100v 131a 4v @ 250ua 5.6 m @ 30a,10v to-263-2 rohs
Datasheet: SUM70060E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 1.733 ea
Line Total: USD 1386.4 
Availability - 0
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 800
Multiples : 800
800 : USD 1.733
4000 : USD 1.726
8000 : USD 1.7188
12000 : USD 1.7117
20000 : USD 1.7043
24000 : USD 1.697
40000 : USD 1.6895
100000 : USD 1.6819
200000 : USD 1.6743
500000 : USD 1.6665

0
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6265
10 : USD 0.6134
30 : USD 0.6039
100 : USD 0.5945

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.6182
10 : USD 2.0298
25 : USD 1.9159
100 : USD 1.6363
500 : USD 1.3463
800 : USD 1.1081
2400 : USD 1.077

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 7
Multiples : 1
7 : USD 1.2126

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 7
Multiples : 1
7 : USD 1.5945
10 : USD 1.5154
25 : USD 1.1391
100 : USD 1.1163

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 800
Multiples : 800
800 : USD 1.822

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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We are delighted to provide the SUM70060E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUM70060E-GE3 and other electronic components in the MOSFETs category and beyond.

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SUM70060E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Maximum 175 C junction temperature 0.0056 at V = 10 V 131 GS 100 53.5 nC 100 % R and UIS tested g 0.0062 at V = 7.5 V 129 GS Material categorization: for definitions of compliance please see TO-263 www.vishay.com/doc 99912 APPLICATIONS D Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting SS G Synchronous rectification DD GG DC/DC converter Top View Motor drive switch Ordering Information: S DC/AC inverter SUM70060E-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET Battery management ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 131 C Continuous Drain Current (T = 150 C) I J D T = 125 C 75 C A Pulsed Drain Current (t = 100 s) I 240 DM Avalanche Current I 50 AS L = 0.1 mH a Single Avalanche Energy E 125 mJ AS b T = 25 C 375 C a Maximum Power Dissipation P W D b T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-Ambient (PCB Mount) R 40 thJA C/W Junction-to-Case (Drain) R 0.75 thJC Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR4 material). S16-0244-Rev. A, 15-Feb-16 Document Number: 65383 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUM70060E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 2 - 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 100 V, V = 0 V, T = 125 C - - 100 DSS DS GS J V = 100 V, V = 0 V, T = 175 C - - 2 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 90 - - A D(on) DS GS V = 10 V, I = 30 A - 0.0046 0.0056 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 30 A - 0.0048 0.0062 GS D a Forward Transconductance g V = 15 V, I = 30 A - 85 - S fs DS D b Dynamic Input Capacitance C - 3330 - iss Output Capacitance C V = 0 V, V = 50 V, f = 1 MHz - 1395 - pF oss GS DS Reverse Transfer Capacitance C -95- rss c Total Gate Charge Q - 53.5 81 g c Gate-Source Charge Q V = 50 V, V = 10 V, I = 30 A - 14.5 - nC gs DS GS D c Gate-Drain Charge Q -13.2- gd Gate Resistance R f = 1 MHz 0.9 1.9 3.8 g c Turn-On Delay Time t -13 26 d(on) c Rise Time t -22 44 r V = 50 V, R = 1.67 DD L ns I 30 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -2754 d(off) c Fall Time t -9 18 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 240 A SM a Forward Voltage V I = 30 A, V = 0 V - 0.86 1.4 V SD F GS Reverse Recovery Time t - 88 176 ns rr Peak Reverse Recovery Charge I I = 30 A, di/dt = 100 A/s -5 10 A RM(REC) F Reverse Recovery Charge Q - 0.22 0.44 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0244-Rev. A, 15-Feb-16 Document Number: 65383 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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