SUM85N15-19 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET 175 C Junction Temperature PRODUCT SUMMARY New Low Thermal Resistance Package V (V) r ( ) I (A) 100% R Tested (BR)DSS DS(on) D g a 150 0.019 V = 10 V 85 GS APPLICATIONS Primary Side Switch Automotive D 42-V EPS and ABS DC/DC Conversion Motor Drives TO-263 G G D S Top View S Ordering Information: SUM85N15-19 SUM85N15-19-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) C Parameter Symbol Limit Unit Drain-Source Voltage V 150 DS Gate-Source Voltage V V GS 20 a T = 25 C C 85 Continuous Drain CurrentContinuous Drain Current (T(T == 175 175 C)C) II JJ DD a T = 125 C 50 C AA Pulsed Drain Current I 180 DM Avalanche Current I 50 AR b Repetitive Avalanche Energy L = 0.1 mH E 125 mJ AR c T = 25 C 375 C bb Maximum Power DissipationMaximum Power Dissipation PP WW DD d T = 25 C 3.75 A Operating Junction and Storage Temperature Range T , T 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit d Junction-to-Ambient PCB Mount (TO-263) R 40 thJA C/WC/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. When mounted on 1 square PCB (FR-4 material). Document Number: 71703 www.vishay.com S-32523Rev. B, 08-Dec-03 1SUM85N15-19 Vishay Siliconix SPECIFICATIONS (T =25 C UNLESS OTHERWISE NOTED) J Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 150 (BR)DSS DS D VV Gate-Threshold Voltage V V = V , I = 250 A 2 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA DS GS GSS V = 150 V, V = 0 V 1 DS GS V = 150 V, V = 0 V, T = 125 C 50 Zero Gate Voltage Drain Currentg I A DS GS J DSDSSS V = 150 V, V = 0 V, T = 175 C 250 DS GS J a On-State Drain Current I V 5 V, V = 10 V 120 A D(on) DS GS V = 10 V, I = 30 A 0.015 0.019 GS D a V = 10 V, I = 30 A, T = 125 C 0.038 Drain-Source On-State Resistance r GS D J DSDS((on)on) V = 10 V, I = 30 A, T = 175 C 0.050 GS D J a Forward Transconductance g V = 15 V, I = 30 A 25 S fs DS D b Dynamic Input Capacitance C 4750 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 530 pF oss GS DS Reverse Transfer Capacitance C 220 rss c Total Gate Charge Q 76 110 g c Gate-Source Charge Q 21 V = 75 V,, V = 10 V,, I = 85 A nC gs DSDS GSGS DD c Gate-Drain Charge Q 26 gd Gate Resistance R 0.5 1.8 3.0 g c Turn-On Delay Time t 22 35 d(on) c Rise Time t 170 250 r VV = 75 V = 75 V,, R R = 0.9 = 0.9 DDDD LL nsns c I 85 A, V = 10 V, R = 2.5 D GEN g Turn-Off Delay Time t 40 60 d(off) c Fall Time t 170 250 f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C Continuous Current I 85 S AA Pulsed Current I 180 SM a Forward Voltage V I = 85 A, V = 0 V 1.0 1.5 V F GS SD Reverse Recovery Time t 130 200 ns rr Peak Reverse Recovery Current I I = 50 A, di/dt = 100 A/ s 8 12 A RM(REC) F Reverse Recovery Charge Q 0.52 1.2 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Document Number: 71703 www.vishay.com S-32523Rev. B, 08-Dec-03 2