APT15F50K KF 500V, 15A, 0.39 Max, t 190ns rr APT15F50KF N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft rr recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C /C result in excellent noise immunity and low switching loss. The rss iss intrinsic gate resistance and capacitance of the poly-silicon gate structure help control D APT15F50K di/dt during switching, resulting in low EMI and reliable paralleling, even when switching G at very high frequency. Single die FREDFET S FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Low t for high reliability Half bridge rr Ultra low C for improved noise immunity PFC and other boost converter rss Low gate charge Buck converter Avalanche energy rated Single and two switch forward RoHS compliant Flyback Absolute Maximum Ratings Symbol Parameter 15F50K 15F50KF Unit Continuous Collector Current T = 25C 15 6.2 I C D Continuous Collector Current T = 100C 10 3.9 A C 1 I Pulsed Drain Current 45 18.6 DM 2 V Gate-Source Voltage 30 V GS 2 E Single Pulse Avalanche Energy 305 mJ AS I Avalanche Current, Repetitive or Non-Repetitive 7 A AR Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Unit Power Dissipation (T = 25C) K 223 W C P D Power Dissipation (T = 25C) KF 37 C Junction to Case Thermal Resistance K 0.56 R JC Junction to Case Thermal Resistance KF 3.3 C/W R JC Case to Sink Thermal Resistance, Flat, Greased Surface 0.11 R CS Operating and Storage Junction Temperature Range -55 150 T ,T J STG C Soldering Temperature for 10 Seconds (1.6mm from case) 300 T L 0.07 oz Package Weight W T 1.2 g 10 inlbf Torque Mounting Torque ( TO-220 Package), 4-40 or M3 screw 1.1 Nm Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT15F50K KF J Symbol Parameter Test Conditions Min Typ Max Unit V V = 0V, I = 250 A Drain-Source Breakdown Voltage 500 V BR(DSS) GS D V /T Reference to 25C, I = 250 A Breakdown Voltage Temperature Coef cient 0.60 V/C BR(DSS) J D V = 10V, I = 7A R 3 Drain-Source On Resistance 0.33 0.39 DS(on) GS D V Gate-Source Threshold Voltage 2.5 4 5 V GS(th) V = V , I = 0.5mA GS DS D V /T Threshold Voltage Temperature Coef cient -10 mV/C GS(th) J V = 500V T = 25C 250 DS J I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 1000 GS J V = 30V I Gate-Source Leakage Current 100 nA GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Min Typ Max Test Conditions Unit g V = 50V, I = 7A Forward Transconductance 11 S fs DS D C 2250 Input Capacitance iss V = 0V, V = 25V GS DS C Reverse Transfer Capacitance 30 rss f = 1MHz C 240 Output Capacitance oss pF 4 C 140 Effective Output Capacitance, Charge Related o(cr) V = 0V, V = 0V to 333V GS DS 5 C Effective Output Capacitance, Energy Related 70 o(er) Q Total Gate Charge 55 g V = 0 to 10V, I = 7A, GS D Q Gate-Source Charge nC gs 13 V = 250V DS Q Gate-Drain Charge 26 gd t Resistive Switching Turn-On Delay Time d(on) 10 t Current Rise Time V = 333V, I = 7A 12 r DD D ns 6 t Turn-Off Delay Time R = 10 , V = 15V 26 d(off) G GG t Current Fall Time 8 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current 15 K D I MOSFET symbol (Body Diode) S 6.2 KF showing the integral reverse p-n A G Pulsed Source Current K4 junction diode 5 (body diode) I 1 (Body Diode) SM S KF 18.6 3 1.0 V V Diode Forward Voltage I = 7A, T = 25C, V = 0V SD J GS SD Reverse Recovery Time 190 T = 25C J t ns rr 340 T = 125C J 3 I = 7A Reverse Recovery Charge T = 25C 0.54 SD J V = 100V Q C DD rr T = 125C 1.27 di /dt = 100A/s J SD Reverse Recovery Current T = 25C 5.9 J I A rrm T = 125C 7.9 J Peak Recovery dv/dt I 7A, di/dt 1000A/ s, V = 333V, SD DD dv/dt 20 V/ns T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 12.45mH, R = 25, I = 7A. J G AS 3 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -5.22E-8/V 2 + 1.21E-8/V + 3.48E-11. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8145 Rev E 3-2010