SUM75N15-18P Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) Q (Typ.) (BR)DSS DS(on) D g 100 % R and UIS Tested d g RoHS 150 0.018 at V = 10 V 64 75 GS COMPLIANT APPLICATIONS Primary Side Switch Power Supplies D TO-263 G G D S Top View S Ordering Information: SUM75N15-18P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage V 150 DS V V Gate-Source Voltage 20 GS d T = 25 C C 75 Continuous Drain Current (T = 150 C) I J D T = 70 C 70 C A I Pulsed Drain Current 180 DM Avalanche Current I 50 AS a L = 0.1 mH E Single Avalanche Energy 125 mJ AS b T = 25 C C 312.5 a P W Maximum Power Dissipation D c 3.12 T = 25 C A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R 40 Junction-to-Ambient (PCB Mount) thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). d. Package limited. Document Number: 69995 www.vishay.com S-82349-Rev. B, 22-Sep-08 1SUM75N15-18P Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 150 (BR)DSS DS D V V V = V , I = 250 A Gate Threshold Voltage 2.5 4.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 250 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS I V = 150 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 150 V, V = 0 V, T = 150 C 250 DS GS J a I V 10 V, V = 10 V 120 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0148 0.018 GS D a R Drain-Source On-State Resistance DS(on) V = 10 V, I = 20 A, T = 125 C 0.0296 0.036 GS D J a g V = 15 V, I = 20 A Forward Transconductance 55 S fs DS D b Dynamic Input Capacitance C 4180 iss C V = 0 V, V = 75 V, f = 1 MHz Output Capacitance 235 pF oss GS DS Reverse Transfer Capacitance C 83 rss c Q Total Gate Charge 64 100 g c Q V = 75 V, V = 10 V, I = 85 A 23 nC Gate-Source Charge gs DS GS D c Q Gate-Drain Charge 16 gd Gate Resistance R f = 1 MHz 2.1 4.2 g c t Turn-On Delay Time 15 25 d(on) c t V = 75 V, R = 0.88 10 15 Rise Time r DD L ns c I 85 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) c t 815 Fall Time f b Source-Drain Diode Ratings and Characteristics T = 25 C C I Continuous Current 75 S A Pulsed Current I 180 SM a V I = 30 A, V = 0 V Forward Voltage 1.0 1.5 V SD F GS t Reverse Recovery Time 130 200 ns rr I I = 50 A, dI/dt = 100 A/s Peak Reverse Recovery Current 812 A RM(REC) F Q Reverse Recovery Charge 520 1200 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69995 2 S-82349-Rev. B, 22-Sep-08