SPA11N80C3 TM CoolMOS Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R T = 25C 0.45 DS(on)max j Extreme dv/dt rated Q 64 nC g,typ High peak current capability 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Ultra low gate charge Ultra low effective capacitances Fully isolated package (2500 VAC 1 minute) TM CoolMOS 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) Type Package Marking SPA11N80C3 PG-TO220-3 11N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) I T =25 C 11 A Continuous drain current D C T =100 C 7.1 C 3) 33 I T =25 C Pulsed drain current D,pulse C E I =2.2 A, V =50 V Avalanche energy, single pulse 470 mJ AS D DD 3),4) E I =11 A, V =50 V 0.2 Avalanche energy, repetitive t AR D DD AR 3),4) I 11 A Avalanche current, repetitive t AR AR MOSFET dv /dt ruggedness dv /dt V =0640 V 50 V/ns DS V 20 Gate source voltage static V GS AC (f >1 Hz) 30 Power dissipation P T =25 C 3 4 W tot C T , T Operating and storage temperature -55 ... 150 C j stg Mounting torque M2.5 screws 50 Ncm Rev. 2.93 Page 1 2018-02-12SPA11N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous diode forward current I 11 A S T =25 C C 3) I 33 Diode pulse current S,pulse 5) dv /dt 4 V/ns Reverse diode dv /dt Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.7 K/W thJC Thermal resistance, junction - R leaded - - 80 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold wave soldering only allowed at leads from case for 10s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 800 - - V (BR)DSS GS D V V =0 V, I =11 A Avalanche breakdown voltage - 870 - (BR)DS GS D V V =V , I =0.68 mA Gate threshold voltage 2.1 3 3.9 GS(th) DS GS D V =800 V, V =0 V, DS GS I Zero gate voltage drain current - - 20 A DSS T =25 C j V =800 V, V =0 V, DS GS - 100 - T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =7.1 A, GS D R Drain-source on-state resistance - 0.39 0.45 DS(on) T =25 C j V =10 V, I =7.1 A, GS D - 1.05 - T =150 C j R Gate resistance f =1 MHz, open drain - 1.2 - G Rev. 2.93 Page 2 2018-02-12