X-On Electronics has gained recognition as a prominent supplier of SSM3K15F,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K15F,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K15F,LF Toshiba

SSM3K15F,LF electronic component of Toshiba
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Part No.SSM3K15F,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=0.1A VDSS=30V
Datasheet: SSM3K15F,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0324 ea
Line Total: USD 97.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
421
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1308
10 : USD 0.0975
25 : USD 0.0967
100 : USD 0.0534
250 : USD 0.0284

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM3K15F,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K15F,LF and other electronic components in the MOSFETs category and beyond.

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SSM3K15F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F High Speed Switching Applications Unit: mm Analog Switch Applications +0.5 2.5-0.3 +0.25 Small package 1.5-0.15 Low on resistance : R = 4.0 (max) ( V = 4 V) 1 on GS : R = 7.0 (max) ( V = 2.5 V) on GS 23 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DS Gate-source voltage V 20 V GSS 1.Gate DC I 100 D 2.Source Drain current mA 3.Drain Pulse I 200 DP S-MINI Drain power dissipation (Ta = 25C) P 200 mW D JEDEC TO-236MOD Channel temperature T 150 C ch Storage temperature T 55 to 150 C JEITA SC-59 stg TOSHIBA 2-3F1F Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.012 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit 3 3 D P 1 2 12 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2001-02 1 2014-03-01 2.90.2 +0.2 1.9 1.1-0.1 0.95 0.95 0~0.1 0.3 +0.1 0.16-0.06 +0.1 0.4-0.05SSM3K15F Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 16 V, V = 0 1 A GSS GS DS Drain-source breakdown voltage V I = 0.1 mA, V = 0 30 V (BR) DSS D GS Drain cut-off current I V = 30 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.8 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 25 mS fs DS D I = 10 mA, V = 4 V 2.2 4.0 D GS Drain-source ON resistance R DS (ON) I = 10 mA, V = 2.5 V 4.0 7.0 D GS Input capacitance C V = 3 V, V = 0, f = 1 MHz 7.8 pF iss DS GS Reverse transfer capacitance C V = 3 V, V = 0, f = 1 MHz 3.6 pF rss DS GS Output capacitance C V = 3 V, V = 0, f = 1 MHz 8.8 pF oss DS GS Turn-on time t 50 on V = 5 V, I = 10 mA, DD D Switching time ns = 0 to 5 V V GS Turn-off time t 180 off Switching Time Test Circuit (a) Test circuit (b) V IN 5 V Output 90% 5 V Input 10% 0 R L 0 V 10 s V DD (c) V V OUT DD 10% V = 5 V DD D.U. 1% 90% Input: t , t < 5 ns V r f DS (ON) t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Precaution V can be expressed as voltage between gate and source when low operating current value is I = 100 A for this th D product. For normal switching operation, V requires higher voltage than V and V requires lower GS (on) th GS (off) voltage than V . th (relationship can be established as follows: V < V < V ) GS (off) th GS (on) Please take this into consideration for using the device. 2 2014-03-01 50

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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