SSM3K15F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F High Speed Switching Applications Unit: mm Analog Switch Applications +0.5 2.5-0.3 +0.25 Small package 1.5-0.15 Low on resistance : R = 4.0 (max) ( V = 4 V) 1 on GS : R = 7.0 (max) ( V = 2.5 V) on GS 23 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DS Gate-source voltage V 20 V GSS 1.Gate DC I 100 D 2.Source Drain current mA 3.Drain Pulse I 200 DP S-MINI Drain power dissipation (Ta = 25C) P 200 mW D JEDEC TO-236MOD Channel temperature T 150 C ch Storage temperature T 55 to 150 C JEITA SC-59 stg TOSHIBA 2-3F1F Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.012 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit 3 3 D P 1 2 12 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2001-02 1 2014-03-01 2.90.2 +0.2 1.9 1.1-0.1 0.95 0.95 0~0.1 0.3 +0.1 0.16-0.06 +0.1 0.4-0.05SSM3K15F Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 16 V, V = 0 1 A GSS GS DS Drain-source breakdown voltage V I = 0.1 mA, V = 0 30 V (BR) DSS D GS Drain cut-off current I V = 30 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.8 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 25 mS fs DS D I = 10 mA, V = 4 V 2.2 4.0 D GS Drain-source ON resistance R DS (ON) I = 10 mA, V = 2.5 V 4.0 7.0 D GS Input capacitance C V = 3 V, V = 0, f = 1 MHz 7.8 pF iss DS GS Reverse transfer capacitance C V = 3 V, V = 0, f = 1 MHz 3.6 pF rss DS GS Output capacitance C V = 3 V, V = 0, f = 1 MHz 8.8 pF oss DS GS Turn-on time t 50 on V = 5 V, I = 10 mA, DD D Switching time ns = 0 to 5 V V GS Turn-off time t 180 off Switching Time Test Circuit (a) Test circuit (b) V IN 5 V Output 90% 5 V Input 10% 0 R L 0 V 10 s V DD (c) V V OUT DD 10% V = 5 V DD D.U. 1% 90% Input: t , t < 5 ns V r f DS (ON) t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Precaution V can be expressed as voltage between gate and source when low operating current value is I = 100 A for this th D product. For normal switching operation, V requires higher voltage than V and V requires lower GS (on) th GS (off) voltage than V . th (relationship can be established as follows: V < V < V ) GS (off) th GS (on) Please take this into consideration for using the device. 2 2014-03-01 50
